Zobrazeno 1 - 8
of 8
pro vyhledávání: '"V. D. Prozorovskii"'
Autor:
O. S. Romanyuk, A. Ya. Gikavyi, M. D. Andriichuk, S. Yu. Paranchich, V. D. Prozorovskii, Yu. S. Paranchich, V. N. Makogonenko
Publikováno v:
Inorganic Materials. 36:1094-1097
GdxHg1-xSe (0
Publikováno v:
Low Temperature Physics. 26:853-856
Results are presented from a comprehensive study of helicon interferometry, nonresonant cyclotron absorption, and the Shubnikov–de Haas effect at microwave frequencies in the compound HgTe and in Hg1−xCdxTe solid solutions. Analysis of the experi
Publikováno v:
Low Temperature Physics. 26:24-27
Results are presented from a study of the magnetic susceptibility and electron spin resonance (ESR) on Cr3+ and Mn2+ ions in a series of samples of the semimagnetic semiconductor Hg1−x−yCrxMnySe with x=0.02 and 0.01⩽y⩽0.08. The experimental r
Autor:
I. Yu. Reshidova, V. D. Prozorovskii
Publikováno v:
Low Temperature Physics. 25:772-775
It is established directly, on the basis of investigations of the Shubnikov–de Haas effect at microwave frequencies and nonresonance cyclotron absorption in solid solution of semimagnetic semiconductor Hg1−x−yCdxMnyTe, that resonant acceptor st
Publikováno v:
Low Temperature Physics. 24:639-642
Experimental results of investigations of monocrystalline samples of Hg1−x−yCrxMnySe solid solution indicate, first, a considerable influence of manganese atoms introduced in Hg1−xCrxSe on the absolute values of physical parameters such as magn
Publikováno v:
Low Temperature Physics. 28:880-882
The results of a study of the structural and magnetic properties of single-crystal samples of the diluted magnetic semiconductor Hg1−xCrxSe with different concentrations of chromium ions (0
Publikováno v:
Semiconductors. 34:32-34
The electrophysical properties of Hg1− xCdxTe crystals subjected to hydrostatic pressure were studied by a noncontact method. It is shown that there exists the effect of irreversible change in the state of native lattice defects. A decrease in hole
Publikováno v:
physica status solidi (b). 38:A101-A103