Zobrazeno 1 - 10
of 54
pro vyhledávání: '"V. D. Kurnosov"'
Autor:
V I Romantsevich, V D Kurnosov, V. A. Simakov, K V Kurnosov, V.N. Drozdovskii, A. V. Ivanov, O. O. Bagaeva, R. V. Chernov
Publikováno v:
Quantum Electronics. 51:970-975
It is shown experimentally and theoretically that increasing the pump current of a laser diode and simultaneously lowering its temperature can ensure an order of magnitude increase in the range of pump currents where the diode emission frequency is t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::076e3fae99d474b74f19e24cd8fbe06c
https://doi.org/10.1070/qel17638
https://doi.org/10.1070/qel17638
Autor:
K. V. Kurnosov, V. D. Kurnosov
Publikováno v:
Quantum Electronics. 50:816-821
The divergence and optical confinement factor of a semiconductor laser with an asymmetric periodic (multilayer) waveguide are numerically simulated. The reasons for the choice of the given heterostructure design are explained, and the consequences of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16a632ae21338bf5ae7e88e2fbebb3f1
https://doi.org/10.1070/qel17305
https://doi.org/10.1070/qel17305
Autor:
K. V. Kurnosov, V. D. Kurnosov
Publikováno v:
Quantum Electronics. 50:688-693
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b7a7a24122bc18cf0b8d42090dd4b78
https://doi.org/10.1070/qel17184
https://doi.org/10.1070/qel17184
Autor:
V I Romantsevich, R. V. Chernov, O. O. Bagaeva, A. V. Ivanov, V. A. Simakov, A. I. Danilov, R. R. Galiev, Yu V Kurnyavko, V D Kurnosov, Maxim A. Ladugin, K V Kurnosov, V.V. Shishkov, A. A. Marmalyuk
Publikováno v:
Quantum Electronics. 50:143-146
High-power semiconductor laser systems based on 1.5 – 1.6 μm single-frequency distributed feedback (DFB) lasers with a sidewall Bragg diffraction grating are developed and their current – voltage, light – current, and spectral characteristics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa22f491078c786a2a56734791718a55
https://doi.org/10.1070/qel17183
https://doi.org/10.1070/qel17183
Autor:
A. I. Danilov, Maxim A. Ladugin, Yu V Kurnyavko, A. V. Ivanov, V. A. Simakov, V I Romantsevich, V D Kurnosov, Yu. L. Ryaboshtan, K V Kurnosov, R. V. Chernov, A. A. Marmalyuk, O. O. Bagaeva, V. N. Svetogorov
Publikováno v:
Quantum Electronics. 50:600-602
High-power 1.5 – 1.6-μm semiconductor lasers with an asymmetric periodic optically coupled waveguide are developed and their current – voltage, light – current, and spectral characteristics are experimentally studied. The characteristics of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7261086f2cfb7ea41e2238f20eef9a6d
https://doi.org/10.1070/qel17304
https://doi.org/10.1070/qel17304
Autor:
V D Kurnosov, Yu. L. Ryaboshtan, Maxim A. Ladugin, O. O. Bagaeva, V. N. Svetogorov, A. A. Marmalyuk, A. V. Ivanov, V I Romantsevich, K V Kurnosov
Publikováno v:
2020 International Conference Laser Optics (ICLO).
High-power laser diodes based on Al x Ga y In 1-x-y As/InP heterostructures emitting in the region of 1.5 – 1.6 μm are actively used in various fields of human activity. This requires continuous improvement of their performance in the considered s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75f5d6a4cfdfbdba2cac295cbf5d2aac
https://doi.org/10.1109/iclo48556.2020.9285608
https://doi.org/10.1109/iclo48556.2020.9285608
Autor:
K. V. Kurnosov, V. D. Kurnosov
Publikováno v:
Quantum Electronics. 48:807-812
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63b37d1bc1d5e86cafa85ade861a2de8
https://doi.org/10.1070/qel16625
https://doi.org/10.1070/qel16625
Autor:
V D Kurnosov, Yu V Kurnyavko, A. I. Danilov, A. V. Ivanov, V I Romantsevich, A. A. Marmalyuk, O. O. Bagaeva, R. V. Chernov, V. A. Simakov, K V Kurnosov
Publikováno v:
Quantum Electronics. 48:495-501
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::479d704f542da920d9b27af8951e3073
https://doi.org/10.1070/qel16624
https://doi.org/10.1070/qel16624
Autor:
V. A. Simakov, Maxim A. Ladugin, A A Padalitsa, A. A. Marmalyuk, V I Romantsevich, V. N. Svetogorov, Yu. L. Ryaboshtan, S. M. Sapozhnikov, K V Kurnosov, A. V. Lobintsov, V D Kurnosov, A. V. Ivanov
Publikováno v:
Quantum Electronics. 49:519-521
This paper presents an experimental study of AlGaInAs/InP semiconductor lasers with different barrier layers. The use of strained layers with an increased band gap as blocking barriers limiting carrier leakage is shown to increase the output power of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80a2c90cd2ca04918ee659e7d5949957
https://doi.org/10.1070/qel17032
https://doi.org/10.1070/qel17032
Autor:
V. D. Kurnosov, K. V. Kurnosov
Publikováno v:
Technical Physics. 62:460-464
A simplified model consisting of a laser diode, air gap, and optical fiber is used to calculate power and spectral characteristics and the band width of the radiation of laser with fiber Bragg grating. The results of the simplified model are in reaso
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d55dd37265376cc6269d1d526a90238a
https://doi.org/10.1134/s1063784217030124
https://doi.org/10.1134/s1063784217030124