Zobrazeno 1 - 10
of 118
pro vyhledávání: '"V. D. Iskra"'
Autor:
V. D. Iskra
Publikováno v:
Soviet Physics Journal. 30:126-130
A calculation is performed and estimates made of the binary correlation functions of the random field produced by the difference in the atomic pseudopotentials of solvent and dissolved materials. Also evaluated are elastic deformation fields in unord
Autor:
Kh. I. Mamedov, M. M. Khalilov, A. A. Chervova, V. O. Shestopal, I. S. Filatov, V. N. Mochalkin, E. G. Povoltskii, Yu. I. Surov, G. A. Vartanova, A. S. Kuz'min, G. G. Beloliptseva, D. I. Vaisburd, �. U. Umetov, A. A. Alybakov, L. S. Gutyrya, V. D. Iskra, L. V. Gorchakov, N. F. Kovalenko, V. I. Yakimenko, A. G. Smagin, P. B. Podosenov, B. M. Adibaev, N. D. Kosov, V. P. Sevryuk, N. D. Tokarev, G. P. Yarovoi, Ya. Ya. Yurike, S. S. Rogacheva, V. I. Danilova, E. E. Sirotkina
Publikováno v:
Soviet Physics Journal. 17:896-903
Autor:
V. D. Iskra
Publikováno v:
Soviet Physics Journal. 17:442-449
Interband light absorption in a disordered semiconductor is considered with due allowance for exciton effects. Allowance is made for the scattering of the electron and hole in a weak static random field and also for collisions of the second kind expe
Autor:
V. D. Iskra
Publikováno v:
Soviet Physics Journal. 30:474-484
The problem of interactions with a periodic lattice potential with scattering by a delta-shaped potential is investigated. Using a closed formal expression for the electric conductivity and factorization of the scattering potential, the temperature d
Autor:
V. D. Iskra
Publikováno v:
Soviet Physics Journal. 25:1002-1005
The binary correlation function of a random field is calculated with the simplest model concepts, taking into account the presence of intermediate order in a macroscopically homogeneous and isotropic homopolar semiconductor.
Autor:
V. D. Iskra
Publikováno v:
Soviet Physics Journal. 28:733-738
Scattering amplitude in the field of a short-range force center is calculated using factorization of the potential. The results obtained are used to study the temperature dependence of charge-carrier mobility in the random field of chaotically distri
Autor:
V. D. Iskra
Publikováno v:
Soviet Physics Journal. 23:653-658
Autor:
V. D. Iskra
Publikováno v:
Soviet Physics Journal. 29:292-297
The relationship between temperature and the mobility of delocalized charge carriers for an intrinsic random field of a homopolar glass is investigated through application of a method of scattering amplitude calculation based on employing short-lived
Autor:
V. D. Iskra
Publikováno v:
Physica Status Solidi (b). 96:843-856
Optical transitions in disordered semiconductors are considered taking into account of many phonon and excitonic effects. Possible observable consequences of the results obtained are discussed. [Russian Text Ignored]
Autor:
V. D. Iskra
Publikováno v:
Soviet Physics Journal. 27:977-980
A relationship is obtained expressing the binary correlation function of an intrinsic random field in a spatially inhomogeneous semiconductor in terms of the atomic pseudopotentials and a factor determined by the binary correlation functions of the a