Zobrazeno 1 - 6
of 6
pro vyhledávání: '"V. D. Heydemann"'
Micropipes are hollow-core dislocations aligned along the growth direction of sublimation grown SiC ingots. We found micropipes nucleated in the interface region between the seed crystal and the grown ingot adjacent to stacking fault clusters on tilt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f1db2de8efc50ed6cded6e826c80a61
https://doi.org/10.1201/9781315140810-67
https://doi.org/10.1201/9781315140810-67
Publikováno v:
Diamond and Related Materials. 6:1262-1265
The dual-seed-crystal method is developed and used to study the growth of 4H- and 6H-SiC boule crystals by varying particular growth parameters, e.g. the distance between the growth front and the source material and the face polarity of the seeds. A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b0d1f876a4601afc7848caa3be60f82
https://doi.org/10.1016/s0925-9635(97)00080-0
https://doi.org/10.1016/s0925-9635(97)00080-0
Publikováno v:
physica status solidi (a). 162:251-262
Micropipes are hollow tubular defects penetrating SiC single crystals. Different mechanisms of formation and stabilization as well as energetic aspects are discussed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b4097b5ac48c8df6e75c29c177f6f43
https://doi.org/10.1002/1521-396x(199707)162:1<251::aid-pssa251>3.0.co
https://doi.org/10.1002/1521-396x(199707)162:1<251::aid-pssa251>3.0.co
Publikováno v:
Applied Physics Letters. 69:3728-3730
The influence of polarity on the SiC crystal growth has been demonstrated using a dual‐seed technique to grow on both the C‐ and Si‐face seed simultaneously. For the investigated range of growth conditions, 4H‐SiC crystals were grown on the C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33ecf53ed01344fe9d980023ae8d8b08
https://doi.org/10.1063/1.117203
https://doi.org/10.1063/1.117203
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 24:1970-1971
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::827804a2d9fdff3e79226abdbb55071e
https://doi.org/10.1116/1.2244538
https://doi.org/10.1116/1.2244538
Publikováno v:
MRS Proceedings. 483
The as-grown surfaces of 6H SiC seed crystals grown by the Lely method have been characterized by visible light microscopy and atomic force microscopy. The surfaces were then used to seed the sublimation growth of SiC at 2300°C, in 650 torr of Ar, w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40751152102c0a1b9bae75161ba4c732
https://doi.org/10.1557/proc-483-295
https://doi.org/10.1557/proc-483-295