Zobrazeno 1 - 10
of 192
pro vyhledávání: '"V. Cosnier"'
Autor:
Matty Caymax, V. Cosnier, R. J. Carter, Eric Garfunkel, Thierry Conard, Torgny Gustafsson, J.W. Maes, Wilman Tsai, Marko Tuominen, M.M. Heyns, W. H. Schulte, J. Petry, O. Richard, E. Young, S. DeGendt, Chao Zhao, Wilfried Vandervorst, H. Nohira
Publikováno v:
Microelectronic Engineering. 65:259-272
The effects of various interface preparations on atomic layer chemical vapor deposition (ALCVD) deposited Al2O3 and ZrO2 dielectrics properties were investigated by X-ray photoelectron spectroscopy (XPS), attenuated total reflection Fourier transform
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 19:2267-2271
Hafnium oxide presents a strong interest either for optical coatings or for microelectronic applications. An important parameter to control is its chemical interaction with silicon oxide, since those two materials are usually in direct contact in bot
Autor:
S. Van Elshocht, Wilfried Vandervorst, Annelies Delabie, Jerry Chen, Martin Green, J. Petry, Matty Caymax, O. Richard, S. De Gendt, Bert Brijs, Hugo Bender, V. Cosnier, O. T. Conard
Publikováno v:
2003 8th International Symposium Plasma- and Process-Induced Damage..
Targeting very thin equivalent oxides (
Autor:
Guido Groeseneken, Eduard A. Cartier, Y. Manabe, Matty Caymax, S. E. Jang, A. Kerber, G. Lujan, Marc Heyns, Chao Zhao, Thierry Conard, S. Lin, J.D. Chen, Vidya Kaushik, Hugo Bender, E. Young, Wilfried Vandervorst, Robin Degraeve, J. Kluth, L. Pantisano, V. Cosnier, Wilman Tsai, S. Van Elshocht, E. Rohr, S. De Gendt, Richard Carter, S. Kubicek, J. Pétry
Publikováno v:
Frontiers in Electronics.
Once the thickness of the gate dielectric layer in CMOS devices gets thinner than 1.2 nm, excessive gate leakage due to direct tunneling makes the use of alternative materials obligatory. Candidate high-k materials are metal oxides such as Al 2 O 3,
Autor:
M. Olivier, J.W. Maes, J.D. Chen, E. Young, S. De Gendt, N. Rochat, W. Vandervorst, A. Chabli, O. Richard, Hugo Bender, A. Caymax, Marko Tuominen, A. Heyns, Thierry Conard, Chao Zhao, H. Nohira, Wilman Tsai, V. Cosnier
Publikováno v:
Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537).
The initial growth mechanism of high-k layers deposited by atomic layer chemical vapor deposition (ALCVD) on differently prepared silicon surfaces and the interface structure, and its evolution, are studied using attenuated total reflection Fourier t
Autor:
Hugo Bender, Annelies Delabie, Martin Green, Martine Claes, R.J. Carter, Luigi Pantisano, S. A. Jang, Y. Manabe, Jerry Chen, E. Cartier, V. Cosnier, A. Kerber, Marc Heyns, Wilman Tsai, Chao Zhao, Matty Caymax, E. Rohr, V. S. Kaushik, E. Young, S. Lin, J. Kluth, S. De-Gendt, Olivier Richard, Sven Van Elshocht
Publikováno v:
MRS Proceedings. 747
Hafnium-based dielectrics are under wide consideration for high-K gate dielectric applications. Since the gate electrode typically used in CMOS integration consists of polysilicon with n- or p-type dopants, compatibility of the HfO2layer with the pol
Autor:
C. Dubourdieu, E. Rauwel, C. Millon, P. Chaudouët, F. Ducroquet, N. Rochat, S. Rushworth, V. Cosnier
Publikováno v:
Chemical Vapor Deposition; Mar2006, Vol. 12 Issue 2/3, p187-192, 6p
Autor:
Samukaite Bubniene, Urte1,2,3 (AUTHOR) urte.bubniene@ftmc.lt, Zukauskas, Sarunas2 (AUTHOR), Ratautaite, Vilma1,2 (AUTHOR), Vilkiene, Monika4 (AUTHOR), Mockeviciene, Ieva4 (AUTHOR), Liustrovaite, Viktorija2 (AUTHOR), Drobysh, Maryia1,2 (AUTHOR), Lisauskas, Aurimas5 (AUTHOR), Ramanavicius, Simonas2,6 (AUTHOR), Ramanavicius, Arunas1,2 (AUTHOR) urte.bubniene@ftmc.lt
Publikováno v:
Energies (19961073). Sep2022, Vol. 15 Issue 18, p6838-6838. 15p.
Autor:
Witkowska, Małgorzata1 m.witkowska.677@studms.ug.edu.pl, Żylicz-Stachula, Agnieszka1, Struck, Anna1
Publikováno v:
Advancements of Microbiology. 2021, Vol. 60 Issue 3, p231-239. 9p.
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