Zobrazeno 1 - 10
of 267
pro vyhledávání: '"V. Babentsov"'
Autor:
Ralph B. James, V. Babentsov
Publikováno v:
Journal of Crystal Growth. 379:21-27
We performed critical analysis and comparison of all EPR, photo-EPR, photosensitive optical absorption, photoluminescence, and photoconductivity data taken on various Zn- and Cd-related II–VI chalcogenides compounds, such as ZnO, ZnS, ZnSe, and ZnT
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f469e33b0712687e4cadd3079bf13f95
https://doi.org/10.1016/j.jcrysgro.2013.04.051
https://doi.org/10.1016/j.jcrysgro.2013.04.051
Autor:
V. Babentsov, Jan Franc, Ralph B. James, J. Crocco, M. V. Sochinskyi, Jakub Zázvorka, Pavel Hlídek, Ernesto Diéguez
Publikováno v:
IEEE Transactions on Nuclear Science. 59:1516-1521
One of the most fundamental parameters relating to bulk crystal growth of CZT from the melt is the temperature gradient applied at the solid-liquid interface throughout the growth cycle. ${\rm Cd}_{1-{\rm x}}{\rm Zn}_{\rm x}{\rm Te}$ ingots grown by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8848ff7e0b4f546d70392acda07370f
https://doi.org/10.1109/tns.2012.2201219
https://doi.org/10.1109/tns.2012.2201219
Publikováno v:
IEEE Transactions on Nuclear Science. 59:1531-1535
As yet, the role of the main native defects in the compensation, trapping, and polarization of x-ray and gamma-ray room-temperature detectors based on semi-insulated cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) is indeterminate. To be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a53c44c14ff55c4d501419f5099fb2a
https://doi.org/10.1109/tns.2012.2191159
https://doi.org/10.1109/tns.2012.2191159
Autor:
J. Kubát, P. Höschl, Roman Grill, V. Babentsov, Eduard Belas, Pavel Moravec, Jan Franc, V. Dedic
Publikováno v:
IEEE Transactions on Nuclear Science. 58:1953-1957
Semi-insulating CdZnTe crystals were studied by photoconductivity mapping using both the contactless method and measurement with evaporated Au contacts. The contact quality was tested by measurement of voltampere characteristics by a three-point meth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33c501d53797102586822a068cf8862b
https://doi.org/10.1109/tns.2011.2147333
https://doi.org/10.1109/tns.2011.2147333
Autor:
Pavel Hlídek, Jan Prochazka, G.A. Schepelskii, V. Babentsov, Vitalii Boiko, Jan Franc, Ralph B. James
Publikováno v:
Journal of Luminescence. 130:1425-1430
We studied deformation-induced defects in semi-insulating CdTe and CdZnTe by infrared photoluminescence (PL), contact less photoconductivity and resistivity. Plastic deformation increased the concentrations of grown-in defects, namely, those of an im
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4348f60bc57966f158a1555e4d65597a
https://doi.org/10.1016/j.jlumin.2010.03.006
https://doi.org/10.1016/j.jlumin.2010.03.006
Autor:
Klaus-Werner Benz, Ernesto Diéguez, V. Babentsov, Jan Franc, P. Höschl, N. V. Sochinskii, R. B. James, Michael Fiederle
Publikováno v:
Crystal Research and Technology. 44:1054-1058
Results on the properties of the known impurities, Ge, Sn, V and Bi, and the lattice imperfections, VCd and TeCd are summarized. We discuss their role in compensation, and in buffering the variations in shallow electronic levels in the grown ingot. W
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d43cf0f45ecff4f232f25311b6a3fd7b
https://doi.org/10.1002/crat.200900348
https://doi.org/10.1002/crat.200900348
Publikováno v:
IEEE Transactions on Nuclear Science. 56:1724-1730
To better our knowledge of the characteristics of semi-insulated cadmium telluride (CdTe) doped with indium (In), we explored the role of deep levels in compensation and trapping. We assessed the defects and their distribution across a wafer in sever
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6f5836b7ff15dbf31307e8abf09f57e
https://doi.org/10.1109/tns.2009.2015316
https://doi.org/10.1109/tns.2009.2015316
Publikováno v:
Journal of Crystal Growth. 311:2377-2380
We investigated theoretically the compositional dependences of deep-level ionization energies, and its possible influence on compensation, and photosensitivity in large bandgap semiconductors. Experimentally, it was illustrated in a semi-insulating C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ca610d991d42cceb87e8de0583dbf0c
https://doi.org/10.1016/j.jcrysgro.2009.02.043
https://doi.org/10.1016/j.jcrysgro.2009.02.043
Autor:
Ernesto Diéguez, P. Praus, P. Hlidek, M. Abellán, Jonathan Rodríguez-Fernández, V. Babentsov, N. V. Sochinskii, Jan Franc
Publikováno v:
Superlattices and Microstructures. 45:228-233
Photoluminescence (PL) from the vapour deposited layers of CdTe have demonstrated a unique quality improvement after as-grown samples have been annealed at relatively low temperatures (500–600 ∘C). The sub-band gap emissions at 4.2 K have been ce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5698bed6697c339211a6c78fc6dc1f0
https://doi.org/10.1016/j.spmi.2008.12.025
https://doi.org/10.1016/j.spmi.2008.12.025
Publikováno v:
Journal of Crystal Growth. 310:3482-3487
We present the results of a comprehensive study of distribution of zinc, resistivity, and photosensitivity in a Cd{sub 1-x}Zn{sub x}Te ingot grown by the Vertical Bridgman method. We used several complementary methods, viz., glow discharge mass spect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b747aa59747c93536d06bb6234745671
https://doi.org/10.1016/j.jcrysgro.2008.05.017
https://doi.org/10.1016/j.jcrysgro.2008.05.017