Zobrazeno 1 - 10
of 14
pro vyhledávání: '"V. B. Tsvetovsky"'
Publikováno v:
International Journal of Thermophysics. 29:1480-1490
The present work describes the results of spectral absorptivity, α, and thermal conductivity, λ, studies for compound oxides Bi4Ge3O12, Bi12GeO20, Bi4Si3O12, and Bi12SiO20 in molten and monocrystalline states. The data for the spectral absorptivity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f446a11f2580b079df19bc452b05431
https://doi.org/10.1007/s10765-008-0499-5
https://doi.org/10.1007/s10765-008-0499-5
Autor:
I. V. Frjazinov, S. V. Bykova, Vladimir D. Golyshev, M. A. Gonik, V. B. Tsvetovsky, M.P. Marchenko
Publikováno v:
Journal of Crystal Growth. 303:297-301
An antimony-doped germanium single crystals were grown by the axial heat processing (AHP) method for experimental–numerical research of faceting of melt/crystal interface. The comparing of experimental and numerical results has shown the high accur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35d178fa5feeb72d1f3eaa99ec1ea997
https://doi.org/10.1016/j.jcrysgro.2006.12.065
https://doi.org/10.1016/j.jcrysgro.2006.12.065
Autor:
I. V. Frjazinov, Vladimir N. Vlasov, Ercan Balikci, Vladimir D. Golyshev, Andrew Deal, Reza Abbaschian, M.P. Marchenko, Jury A. Serebrjakov, Sveta V. Bykova, M. A. Gonik, V. B. Tsvetovsky
Publikováno v:
Journal of Crystal Growth. 275:e229-e236
An antimony-doped germanium single crystal was grown by the Axial Heat Processing (AHP) method from the melt to study the influence of facets on the morphological stability of a solid/liquid interface. It is shown that the faceted portion of the inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9cb4244e26b17ac414a487eb9aa0560
https://doi.org/10.1016/j.jcrysgro.2004.11.034
https://doi.org/10.1016/j.jcrysgro.2004.11.034
Autor:
Thierry Duffar, I. V. Frjazinov, Vladimir D. Golyshev, Sveta V. Bykova, Jean. L. Santailler, Ernesto Diéguez, Victor N. Vlasov, Jury A. Serebrjakov, M. A. Gonik, V. B. Tsvetovsky, M.P. Marchenko
Publikováno v:
Journal of Crystal Growth. 275:e577-e584
To investigate a weak melt flow effect on the segregation process, the axial heat processing crystal growth technique was used at conditions of low-frequency temperature fluctuations. This technique was applied to Te-doped GaSb crystal growth. A two-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9693d2cb3f693d78b1631ae58f78b8ba
https://doi.org/10.1016/j.jcrysgro.2004.11.001
https://doi.org/10.1016/j.jcrysgro.2004.11.001
Autor:
S. V. Bykova, A. Ya. Karvatskii, Jeffrey J. Derby, Oleg Weinstein, Andrew Yeckel, V. I. Deshko, A. V. Lenkin, V. B. Tsvetovsky, Simon Brandon, Paul Sonda, M. A. Gonik, Vladimir D. Golyshev, Alexander Virozub
Publikováno v:
Journal of Crystal Growth. 266:246-256
Combined experimental and numerical tools are used to analyze the effect of convective and radiative heat transport, faceting phenomena, and the optical thickness of the Bi4Ge3O12 (BGO) crystal on the measurement and calculation of melt/crystal inter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c24c3277fbceab6fb8c8fbef23722b63
https://doi.org/10.1016/j.jcrysgro.2004.02.052
https://doi.org/10.1016/j.jcrysgro.2004.02.052
Autor:
and Marina P. Marchenko, M. A. Gonik, S. V. Bykova, Andrew Deal, Ercan Balikci, Reza Abbaschian, V. B. Tsvetovsky, I. V. Frjazinov, Vladimir D. Golyshev
Publikováno v:
Crystal Growth & Design. 4:377-381
An antimony-doped germanium single crystal was grown by the axial heat processing (AHP) method from the melt to study the influence of facets on the morphological stability of a solid/liquid interface. A mathematical model together with experimental
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::722778b735fbfb3c8501e1c606863a05
https://doi.org/10.1021/cg030028x
https://doi.org/10.1021/cg030028x
Publikováno v:
High Temperatures-High Pressures. :139-148
Methods of measuring the thermal conductivity of materials in solid and liquid state at high temperatures are reviewed. Factors influencing the accuracy of the obtained results are examined. Special attention is paid to the role of contact resistance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34df9ae2987559ac881a970f71935da2
https://doi.org/10.1068/htjr106
https://doi.org/10.1068/htjr106
Publikováno v:
Journal of Crystal Growth. :735-739
The determination of the dependence for supercooling of Bi 4 Ge 3 O 12 facet on growth rate V is discussed. The method of measurement of the interface temperature by an optical pyrometer in the presence of several facets with different crystallograph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2293e7681491f35b6ff49c8cbecd7cdf
https://doi.org/10.1016/s0022-0248(01)01990-x
https://doi.org/10.1016/s0022-0248(01)01990-x
Autor:
S. V. Bykova, M.P. Marchenko, I. V. Frjazinov, Vladimir D. Golyshev, M. A. Gonik, V. B. Tsvetovsky
Publikováno v:
Journal of Crystal Growth. :1886-1891
The possibility of obtainingthe well-known weakly forced melt flow alongthe melt–crystal interface is studied. It is shown that the well-known laminar-forced melt flow can be provided duringcrystallization by a method of crystal growth in an axial
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b8dab8ccb08ccefc84fa219f3591e67
https://doi.org/10.1016/s0022-0248(01)02211-4
https://doi.org/10.1016/s0022-0248(01)02211-4
Publikováno v:
International Journal of Modern Physics B. 16:34-41
The results of in situ measurements of dependence of growth rate on supercooling of the Bi 4 Ge 3 O 12 (BGO) interface are presented. Supercooling was measured with an optical pyrometer through the growing crystal. The features of interfacial kinetic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92786349718ebdf9764dff2bc6a707bd
https://doi.org/10.1142/s0217979202009421
https://doi.org/10.1142/s0217979202009421