Zobrazeno 1 - 10
of 70
pro vyhledávání: '"V. B. Shuman"'
Autor:
N. Dessmann, S. G. Pavlov, A. Pohl, V. B. Shuman, L. M. Portsel, A. N. Lodygin, Yu. A. Astrov, N. V. Abrosimov, B. Redlich, H.-W. Hübers
Publikováno v:
Physical Review B, 106, 19, pp. 1-8
Physical Review B, 106, 1-8
Physical Review B, 106, 1-8
Contains fulltext : 288642.pdf (Publisher’s version ) (Open Access)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6873e107c65719bf47bce3ba07327cdc
https://doi.org/10.1103/PhysRevB.106.195205
https://doi.org/10.1103/PhysRevB.106.195205
Autor:
A. A. Lavrent’ev, Yu. A. Astrov, A. N. Lodygin, Nickolay Abrosimov, L. M. Portsel, V. B. Shuman
Publikováno v:
Semiconductors. 54:393-398
The diffusion profiles of the concentration of electrically active and total concentrations of the magnesium impurity in silicon are measured. Diffusion is carried out by the sandwich method into FZ dislocation-free n-type silicon at the temperatures
Autor:
Stephen Anthony Lynch, H.-W. Hübers, L. M. Portsel, V. B. Shuman, A. N. Lodygin, V.V. Tsyplenkov, Yu. A. Astrov, S.G. Pavlov, Nickolay Abrosimov
Infrared absorption cross sections and corresponding oscillator strengths of several intracenter transitions of double donors in silicon, interstitial magnesium (Mg; group IIA) and substitutional chalcogens (Ch = S; Se; group VI), were determined for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::369b063db045dbc11cc62b37b83c49d7
https://orca.cardiff.ac.uk/id/eprint/145933/1/PhysRevMaterials.5.114607.pdf
https://orca.cardiff.ac.uk/id/eprint/145933/1/PhysRevMaterials.5.114607.pdf
Autor:
L. M. Portsel, A. N. Lodygin, Nickolay Abrosimov, V. B. Shuman, Yu. A. Astrov, Joerg Weber, Nikolai Yarykin
Publikováno v:
Semiconductors. 53:789-794
Electrically active centers in n-type magnesium-doped silicon crystals are studied by deep-level transient spectroscopy (DLTS). Magnesium is introduced by diffusion from a metal film on the surface at 1100°C. It is found that two levels with a simil
Autor:
Andreas Pohl, V. B. Shuman, L. M. Portsel, A. N. Lodygin, Heinz-Wilhelm Hübers, Sergey Pavlov, Yuri A. Astrov
Diatomic centers of double donor doped silicon have lower chemical shifts as compared to the corresponding atomic impurity and by this essentially extend spectral sensitivity of silicon extrinsic infrared detectors towards longer wavelengths. Additio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0ce2490d04351d879b260a340eede550
https://elib.dlr.de/142123/
https://elib.dlr.de/142123/
Autor:
Nickolay Abrosimov, Sergey Pavlov, V. B. Shuman, A. N. Lodygin, Heinz-Wilhelm Hübers, Hans Engelkamp, Yu. A. Astrov, L. M. Portsel, D. L. Kamenskyi, A. Marchese
Publikováno v:
Physical Review B, 102, 1-8
Physical Review B, 102, 11, pp. 1-8
Physical Review B, 102, 11, pp. 1-8
Magnesium (Mg) atoms in interstitial positions of a silicon host lattice form double donor centers. The binding energy of the neutral $\mathrm{M}{\mathrm{g}}^{0}$ state corresponds to midinfrared wavelengths. Due to its interstitial character, the ou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6a30ef8a74d0879b5d3660b7e74b8cda
http://hdl.handle.net/2066/225054
http://hdl.handle.net/2066/225054
Publikováno v:
Semiconductors. 51:798-802
Analytical expressions describing the dependences of the p +–n-junction leakage current on the doping level of the p +-type region are derived by taking into account a whole set of nonlinear physical effects: electron–hole scattering, Auger recom
Autor:
Sergey Pavlov, Nickolay Abrosimov, Yu. A. Astrov, A. N. Lodygin, Heinz-Wilhelm Hübers, V. B. Shuman, Stephanie Simmons, L. M. Portsel, Rohan J. S. Abraham, M. L. W. Thewalt
Publikováno v:
Physical Review B. 99
Magnesium in silicon primarily occupies an interstitial site, where it acts as a moderately deep double donor. It has recently been shown that interstitial magnesium can pair with the substitutional acceptor boron to form a shallow single-donor cente
Autor:
D. V. Shengurov, S.G. Pavlov, Heinz-Wilhelm Hübers, Vladimir Rumyantsev, Yu. A. Astrov, V. V. Tsyplenkov, R.Kh. Zhukavin, V.N. Shastin, A. N. Lodygin, V. B. Shuman, Nickolay Abrosimov, K. A. Kovalevsky, J. M. Klopf, L. M. Portsel
Publikováno v:
XXIII International Symposium "Nanophysics and Nanoelectronics", 11.-14.03.2019, Nizhny Novgorod, RussiaSemiconductors 53(9), 1234-1237
The results of experiments aimed at the observation of split 1s states in Mg-doped Si are reported. From the results, it is possible to determine the chemical shift and exchange interaction energy of a neutral Mg donor in Si. The position of the 1s(E
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::76e1a4b14a31819600d8e2d2161d7e40
https://doi.org/10.1134/s1063782619090197
https://doi.org/10.1134/s1063782619090197
Autor:
Yu. A. Astrov, Sergey Pavlov, L. M. Portsel, A. N. Lodygin, Heinz-Wilhelm Hübers, V. B. Shuman, Nickolay Abrosimov
Publikováno v:
Физика и техника полупроводников. 55:299
The optical properties of magnesium impurity in silicon, whose atoms at interstitial positions in the lattice are deep double donors with an ionization energy of 107.56 meV in the neutral state, were studied. For optical transitions from the ground s