Zobrazeno 1 - 10
of 18
pro vyhledávání: '"V. B. Pikulev"'
Publikováno v:
Journal of Applied Spectroscopy. 89:849-855
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb28e0505a1cb82931dfab864ba8b227
https://doi.org/10.1007/s10812-022-01436-z
https://doi.org/10.1007/s10812-022-01436-z
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 16:747-752
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9850a256b2e3a19633c987ce5131fb32
https://doi.org/10.1134/s1027451022050159
https://doi.org/10.1134/s1027451022050159
Publikováno v:
Journal of Applied Spectroscopy. 89:638-645
The results of an IR spectroscopic study of the content of water and hydrogen defects in hydrothermal and pegmatite quartz from quartz-vein occurrences in Karelia (North-West Russia), considered as a promising source of high-purity quartz raw materia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c1bc3109d5529c09900153ebdd68120
https://doi.org/10.47612/0514-7506-2022-89-5-638-645
https://doi.org/10.47612/0514-7506-2022-89-5-638-645
Publikováno v:
Optics and Spectroscopy. 129:692-699
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a0dbdea721f665d7b62c097ccc527c2
https://doi.org/10.1134/s0030400x21050143
https://doi.org/10.1134/s0030400x21050143
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 15:337-340
The results of X-ray studies of samples of purified and thermally modified shungite carbon are presented. The quantitative characteristics of short-range order are determined, and 3D models of regions of short-range ordering are presented. It is foun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e30d95fe77608fafd4f61bcc39813273
https://doi.org/10.1134/s1027451021020270
https://doi.org/10.1134/s1027451021020270
Publikováno v:
Transaction Kola Science Centre. 11:168-173
The main contribution to the luminescence of LiNbO3 : Zn (0,04 ÷ 2,01 mol. %) at 420 and 440 nm was established to be due to two electro-hole pairs of Nb4+–O-in niobium octahedron. Moreover, the luminescence weakly depends on Li / Nb ratio and Zn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d90ad2be818af784b133372ad9f8f50
https://doi.org/10.37614/2307-5252.2020.3.4.036
https://doi.org/10.37614/2307-5252.2020.3.4.036
Publikováno v:
Transaction Kola Science Centre. 11:173-177
The photoluminescence intensity in lithium niobate crystals close to the stoichiometric composition being lower than in a congruent crystal was established. The increase of Li / Nb ratio leads to shifting the photoluminescence bands to the short-wave
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afca31c34ebc720ac1c6921a90a13495
https://doi.org/10.37614/2307-5252.2020.3.4.037
https://doi.org/10.37614/2307-5252.2020.3.4.037
Publikováno v:
physica status solidi (a). 206:1352-1355
We have studied in vitro an efficiency of the promising photosensitizer for photodynamic therapy (PDT) on the base of porous silicon (PSi) impregnated with fullerene C 60 . It is shown that a low concentration addition of fullerene boosts sharply a c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5585c311c9588de4304c2ead54101ba
https://doi.org/10.1002/pssa.200881059
https://doi.org/10.1002/pssa.200881059
Publikováno v:
physica status solidi (a). 206:1268-1272
Experimental evidences are presented for the first time that singlet oxygen generated ex situ acts as an inhibitor of nonradiative recombination in porous silicon (PSi). This effect is observed on a pristine PSi as well as on degraded porous layers q
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d330d9dfd4fe4d575421534159c4181c
https://doi.org/10.1002/pssa.200881055
https://doi.org/10.1002/pssa.200881055
Publikováno v:
Russian Microelectronics. 37:277-282
An instrument is presented for measuring major MOSFET parameters. It implements the method of charge pumping as well as providing static I–V characteristics. The former capability enables one to investigate the quality of semiconductor-insulator in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af3d4bb93992356ca5f0bb022b703f22
https://doi.org/10.1134/s1063739708040082
https://doi.org/10.1134/s1063739708040082