Zobrazeno 1 - 9 of 9 pro vyhledávání: '"V. B. Kulikov"'
1
nBn-Photodiode Based on InAsSb/AlAsSb Alloys with a Long-Wavelength Cutoff of 5 μm
Autor: N. I. Katsavets, I. V. Kogan, A. R. Sabirov, V. B. Kulikov, I. V. Shukov, V. P. Chaly, D. V. Maslov, A. L. Dudin, A. A. Solodkov
Publikováno v: Semiconductors. 52:1743-1747
The results of studying the photoelectric characteristics of an nBn structure are presented. The photodiodes based on such structures may have a cutoff wavelength as high as 5 μm. Calculations based on these results show that such photodiodes have a
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d4887451572c0de7a5bd53bf9478e8c4
https://doi.org/10.1134/s1063782618130110
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2
An atomic force microscopy study of hybrid polymeric membranes: Surface topographical analysis and estimation of pore size distribution
Autor: Ilnaz I. Zaripov, I. M. Davletbaeva, Ilya V. Vorotyntsev, Tatyana S. Sazanova, V. B. Kulikov
Publikováno v: Petroleum Chemistry. 56:427-435
The surface morphology of polymeric membranes as organic–inorganic block copolymers has been studied by atomic force microscopy (AFM). These hybrid block copolymers have been obtained by the polyaddition of toluene 2,4-diisocyanate to macroinitiato
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6d361820633a58addd36b60f32ab6090
https://doi.org/10.1134/s096554411605011x
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4
Photosensitivity of structures with quantum wells under normal radiation incidence
Autor: V. B. Kulikov, V. P. Chaly
Publikováno v: Semiconductors. 48:212-215
The results of investigations of photosensitivity are presented for normal radiation incidence to structures with quantum wells grown by molecular-beam and gas-phase epitaxy methods but having nominally identical construction. It is established that
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ef58bb1fd046f4443d0690b7023b2a43
https://doi.org/10.1134/s106378261402016x
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5
Investigation of matrix photodetectors on structures with quantum wells in conditions of intensive optical lightning
Autor: G. K. Vasil’ev, M. V. Sakharov, B. G. Bravyi, V. G. Sredin, V. B. Kulikov
Publikováno v: Russian Microelectronics. 41:498-502
Results of the investigation of degradation processes in matrix photodetectors on structures with quantum wells in the field of intensive laser radiation are presented. It is shown that the area joining the photodetector matrix crystal with the silic
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cd803fe105381a22c4d15c917225a261
https://doi.org/10.1134/s1063739712080161
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6
Refined model for the current-voltage characteristics of quantum-well infrared photodetectors
Autor: V. B. Kulikov
Publikováno v: Semiconductors. 46:1158-1162
The temperature dependences of the dark current of quantum-well infrared photodetectors are investigated experimentally. It is established that the pre-exponential factor in the analytical expression for the photodetector current-voltage characterist
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ee5c907fcac0079dff70946e110e396c
https://doi.org/10.1134/s106378261209014x
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7
Characteristics of nuclear radiation detectors based on semi-insulating gallium arsenide
Autor: E. P. Veretenkin, V. N. Gavrin, V. I. Vasil’ev, A. Ya. Polyakov, Yu. P. Kozlova, V. K. Eremin, Alexander M. Ivanov, V. B. Kulikov, E. M. Verbitskaya, Nikita B. Strokan, A. V. Markov
Publikováno v: Semiconductors. 38:472-479
The characteristics of detectors based on bulk semi-insulating GaAs (SI-GaAs) have been studied by α particle detection and spectrometry. A distinctive feature of these detectors is the dependence of the width of the space charge region W on reverse
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c755a8d5ba17ac3b5ec34c69f081701b
https://doi.org/10.1134/1.1734677
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8
3- to 5 μm InGaAs/AlGaAs QWIP heterostructure growth by metal organic chemical vapor deposition
Autor: A.A. Padalitsa, P.V. Bulaev, A. I. Khatountsev, L. M. Vacilevskay, A. V. Petrovsky, A.A. Marmalyuk, I.D. Zalevsky, V. B. Kulikov, D. B. Nikitin, U. A. Kuznetsov, I. V. Budkin
Publikováno v: SPIE Proceedings.
InGaAs semiconductor heterostructures with multiple quantum wells for large-scale photodetectors on 3-5 spectral range were grown by low pressure metalorganic chemical vapor deposition. Growth conditions were optimizedto obtain highly uniform heteros
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ff76992c9b5e8ec75fa1e4e9e34e31fb
https://doi.org/10.1117/12.517314
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