Zobrazeno 1 - 10
of 66
pro vyhledávání: '"V. B. Kopylov"'
Publikováno v:
Journal of Luminescence. 226:117412
We report the observation of photoluminescence (PL) of energy levels presumably associated with extended defects in metamorphic buffer InxAl1–xAs with x = 0.05 → 0.65 at photon energy range of 0.8–1.2 eV, while the quantum well PL was observed
Publikováno v:
Russian Journal of Physical Chemistry A. 82:1179-1183
Based on IR spectroscopy data, it was established that nonstoichiometry defects in the structure of aluminum oxides were components of the Wannier-Mott exciton states and included the Al-O, Al-Al, O2, O2+, O2−, O22−, O3, and O2n isolated oscillat
Autor:
E. V. Sergeev, V. B. Kopylov
Publikováno v:
Russian Journal of General Chemistry. 78:1111-1117
Thermal treatment of copper oxides (CuO, Cu2O) is accompanied by large-scale emission of singlet oxygen molecules (1Σ+g). Electron spectroscopy for chemical analysis (ESCA) and electronic and IR spectroscopy were used to show that the thermoemission
Publikováno v:
Russian Journal of General Chemistry. 78:868-875
High-resolution IR spectroscopic study has shown that stepwise heating of samples of silicon oxides in the temperature range from 50 to 1000°C is accompanied by accumulation of electronically excited states in the skeletal Si-O bond system, as well
On the issue of structure-chemical features of silicon oxides and thermal emission of singlet oxygen
Autor:
V. B. Kopylov
Publikováno v:
Russian Journal of General Chemistry. 78:347-354
Special features of the chemical structure of silicon oxides were analyzed by the methods of vibrational and electronic spectroscopy and it was found that cationic (Si-Si) and anionic (O2 and O3) sublattices contain isolated individual Si-CO oscillat
Autor:
V. B. Kopylov, E. V. Sergeev
Publikováno v:
Technical Physics Letters. 33:670-673
A new method of measurement of the magnetic susceptibility of substances in a broad range of temperatures is described, which is based on the compensation (nulling) of an external magnetic field and a non-mechanical detection of the secondary magneti
Publikováno v:
SPIE Proceedings.
Zirconium oxide (ZrO2) films have been deposited on cleaned and heated p -type Si (100) substrates by electron-beam evaporation technique. It is shown that the intermediate SiO2 layer on ZrO2/Si interface is absence. The W/YSZ/Si and Mo/YSZ/Si struct
Publikováno v:
Russian Journal of General Chemistry. 80:1882-1883
Publikováno v:
Russian Journal of General Chemistry. 80:1884-1885
Publikováno v:
Russian Journal of General Chemistry. 77:1811-1812