Zobrazeno 1 - 10
of 19
pro vyhledávání: '"V. B. Khalfin"'
Autor:
G. Parthasarathy, Paul E. Burrows, V. G. Kozlov, V. B. Khalfin, J. Wang, Stephen R. Forrest, Stephen Y. Chou
Publikováno v:
IEEE Journal of Quantum Electronics. 36:18-26
The challenges to realizing diode lasers based on thin films of organic semiconductors are primarily related to low charge carrier mobility in these materials. This not only limits the thickness of organic films to /spl les/100 nm in electrically pum
Autor:
L. R. Danielson, Christine A. Wang, D. M. DePoy, Dmitri Z. Garbuzov, H. K. Choi, M. Freeman, G. W. Charache, P. F. Baldasaro, V. B. Khalfin, Ronald J. Gutmann, J.M. Borrego, Ramon U. Martinelli, S. Saroop
Publikováno v:
Journal of Applied Physics. 85:2247-2252
The hotside operating temperatures for many projected thermophotovoltaic (TPV) conversion system applications are approximately 1000 °C, which sets an upper limit on the TPV diode band gap of 0.6 eV from efficiency and power density considerations.
Autor:
G. Parthasarathy, Mark E. Thompson, Paul E. Burrows, Marc A. Baldo, V. B. Khalfin, V. G. Kozlov, S. R. Forrest, Vladimir Bulovic, Y. You
Publikováno v:
Scopus-Elsevier
We present a study of optically pumped waveguide and microcavity lasers based on vacuum-deposited thin films of small molecular weight organic semiconductors. Lasing action in waveguide lasers is characterized by high output peak power (50 W), high d
Autor:
V. B. Khalfin, Stephen R. Forrest, Dmitri Z. Garbuzov, Vladimir Bulovic, Gong Gu, P. E. Burrows
Publikováno v:
Physical Review B. 58:3730-3740
We present an integrated classical and quantum-mechanical theory of weak microcavity effects in layered media that treats both radiative and waveguided modes. The electromagnetic field of radiative modes is determined using classical field quantizati
Publikováno v:
Journal of Applied Physics. 84:547-554
A microscopic quantum-mechanical analysis of the intervalence band absorption of radiation (IVA) with hole transition into the spin-orbit split-off band has been made. It was found that IVA can heavily influence the threshold characteristics and quan
Autor:
I. V. Kudryashov, V. P. Evtikhiev, R. K. Bauer, Dmitri Z. Garbuzov, T. E. Kudrik, N. I. Katsavets, V. B. Khalfin, Zh. I. Alferov, Dieter Bimberg, A. B. Komissarov
Publikováno v:
Journal of Applied Physics. 75:4152-4155
The paper reports a theoretical and experimental study of the dependence of the radiative recombination efficiency (ηi) on the GaAs quantum well width (Lz) in AlGaAs/GaAs quantum well structures with binary/binary superlattice confinement. Values of
Publikováno v:
Soviet Journal of Quantum Electronics. 20:1320-1323
An estimate is obtained of the maximum output power P cW of an injection semiconductor laser per unit width of the active stripe. It is assumed that the power is limited by the optical strength of the mirrors. Several variants of heterostructures wit
Publikováno v:
Applied Physics Letters. 73:435-437
We model a three-color stacked organic light emitting device (SOLED) and determine the influence of microcavity effects on the color saturation of the layered, light emitting elements. Using the model, we design and demonstrate a SOLED with good colo
Publikováno v:
Applied Physics Letters. 72:2138-2140
We introduce a class of low-reflectivity, high-transparency, nonmetallic cathodes useful for a wide range of electrically active, transparent organic devices. The metal-free cathode employs a thin film of copper phthalocyanine (CuPc) capped with a fi
Autor:
N. V. Shuvalova, V. B. Khalfin, A. Yu. Leshko, A. V. Lyutetskii, Nikita A. Pikhtin, Yu. V. Il'in, I. S. Tarasov
Publikováno v:
Technical Physics Letters. 23:214-216
Wavelength tuning over a 12 nm range is obtained for a two-section InGaAsP/InP Fabry-Perot laser (λ=1.55 μm). The method used to vary the gain profile of the laser allows one to predict the range of possible wavelength tuning.