Zobrazeno 1 - 10
of 19
pro vyhledávání: '"V. B. Bogevolnov"'
Publikováno v:
Applied Surface Science. 540:148344
This article offers a consistent interpretation of the dynamic behavior of a real interface in measurements. The studied interface consists of a Ge-substrate with a monolayer of dipole molecules and a wet electrode. The gradual removal of protons fro
Publikováno v:
Semiconductors. 51:193-195
A semiconductor—organic-insulator system with spatially distributed charge is created with a uniquely low density of fast surface states (Nss) at the interface. A system with Nss ≈ 5 × 1010 cm–2 is obtained for the example of n-Ge and the phys
Publikováno v:
Surface Science. 691:121508
The electrolyte-semiconductor interface is widely spread in physical, chemical, and biological systems, which makes the task of refining the physical interface model relevant for the development of studies of living and nonliving systems. When studyi
Publikováno v:
Semiconductors. 44:564-567
Films of cadmium telluride are synthesized by molecular deposition on the substrates made of graphite, mica, and Si. Homogeneous photosensitive layers with the area 65 cm2 and thickness from 0.5 to 5 μm and hole concentration of 6.3 × 1016 cm−3 (
Autor:
A. N. Anagnostopoulos, V. B. Bogevolnov, A. D. Perepelkin, O. Shevchenko, A. M. Yafyasov, I. M. Ivankiv
Publikováno v:
Chaos, Solitons & Fractals. 17:225-229
Autor:
V. B. Bogevolnov, O. Yu. Shevchenko, I. M. Ivankiv, A. D. Perepelkin, A. N. Anagnostopoulos, A. M. Yafyasov
Publikováno v:
physica status solidi (b). 231:451-456
The field effect method in electrolytes is used for finding the electrophysical characteristics of the surface and the band parameters in the surface layers of the semiconductor TlBiSe 2 . In this paper the dispersion law and the effective mass of el
Publikováno v:
2014 2nd 2014 2nd International Conference on Emission Electronics (ICEE).
Publikováno v:
Scopus-Elsevier
Two-dimensional (2D) electron gas at interface anodic oxide – HgTe (1 1 0) is studied experimentally (by magneto-capacitance spectroscopy method) and theoretically at carriers surface density up to 6×10 12 cm −2 . The measurements show the popul
Autor:
Ioannis Antoniou, E.P. Brazhkin, Yu. Melnikov, Z. Suchanecki, Evgueni Karpov, A. M. Yafyasov, V. B. Bogevolnov
Publikováno v:
physica status solidi (b). 225:317-329
The quantum interference properties of simple model systems of arrays of barriers are considered. We discuss the capabilities for realizing new nanodevices based on the constructive interference for coding and decoding signals.
Publikováno v:
Semiconductors. 35:525-528
A procedure is proposed for determining the stoichiometric composition of an intrinsic semiconductor Hg1−xCdxTe, relying upon the field effect in an electrolyte. An original comparative analysis of experimental capacitance-voltage characteristics a