Zobrazeno 1 - 10
of 25
pro vyhledávání: '"V. A. Verbus"'
Autor:
D. V. Yurasov, N. A. Baídakova, V. A. Verbus, N. S. Gusev, E. E. Morozova, D. V. Shengurov, A. N. Yablonskiy, A. V. Novikov
Publikováno v:
Semiconductors. 55:531-536
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a61280437a7b645f1f712803c12bffb
https://doi.org/10.1134/s1063782621050183
https://doi.org/10.1134/s1063782621050183
Autor:
E. E. Morozova, Aleksandr Mashin, E. V. Skorohodov, A. V. Novikov, N. A. Baidakova, Artem N. Yablonskiy, D. V. Yurasov, Aleksey Nezhdanov, V. A. Verbus, Nikita Gusev, D. V. Shengurov
Publikováno v:
Semiconductors. 53:1324-1328
The results on the formation of locally strained Ge microstructures on silicon-on-insulator (SOI) substrates and investigation of their optical properties are presented. Suspended Ge structures are formed by optical lithography and plasmachemical and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f66840b7d0725a8d7eabb7dbc57fbfc8
https://doi.org/10.1134/s1063782619100257
https://doi.org/10.1134/s1063782619100257
Autor:
Marina Vladislavovna Silaeva, I. A. Bakunina, V. A. Verbus, A. M. Osharin, Vera Andreevna Silaeva
Publikováno v:
Journal of Economic Structures, Vol 9, Iss 1, Pp 1-12 (2020)
The paper develops a two-country monopolistic competition model of trade featuring country-specific consumer tastes. The accounting for heterogeneity in tastes is achieved by assuming different elasticities of substitution in the CES utility function
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9fc6e8ef5f7536d4ee26e3303b79a071
https://doi.org/10.1186/s40008-020-0179-6
https://doi.org/10.1186/s40008-020-0179-6
Autor:
A. V. Novikov, V. A. Verbus, Aleksey Nezhdanov, D. V. Yurasov, Artem N. Yablonskiy, K. E. Kudryavtsev, N. A. Baidakova, Nikita Gusev, Aleksandr Mashin, E. E. Morozova, E. V. Skorohodov
Publikováno v:
Semiconductors. 52:1442-1447
The formation and properties of locally tensile strained Ge microstructures (“microbridges”) based on Ge layers grown on silicon substrates are investigated. The elastic-strain distribution in suspended Ge microbridges is analyzed theoretically.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45d42250c4ef64b989a0d9064042e0af
https://doi.org/10.1134/s1063782618110167
https://doi.org/10.1134/s1063782618110167
Autor:
A. M. Osharin, V. A. Verbus
Publikováno v:
Journal of Economics. 125:211-237
The paper considers a two-sector two-country trade model of monopolistic competition featuring the heterogeneity of consumer preferences and incomes within and across countries. The incorporation of heterogeneity into a monopolistic competition setti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53b72a5378f2136caa404e438e0a71ea
https://doi.org/10.1007/s00712-018-0599-z
https://doi.org/10.1007/s00712-018-0599-z
Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells
Autor:
N. A. Baidakova, Noritaka Usami, A. V. Novikov, V. A. Verbus, Mikhail Shaleev, E. E. Morozova, Atsushi Hombe, Yasuyoshi Kurokawa, E. V. Skorohodov, D. V. Yurasov
Publikováno v:
Semiconductors. 51:1542-1546
Dependences of the etch rates for KOH and HF:H2O2:CH3COOH solutions on SiGe layer composition were investigated. The obtained results has been proposed to use for formation of the submicron relief on the silicon surface via selective etching of the s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74576dfdde5f0b0b9e1d575f1c8ec087
https://doi.org/10.1134/s1063782617120028
https://doi.org/10.1134/s1063782617120028
Publikováno v:
Economics Letters. 122:348-352
We develop a model of monopolistic competition that accounts for consumers' heterogeneity in both incomes and preferences. This model makes it possible to study the implications of income redistribution on the toughness of competition. We show how th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e528bc2bb3f2fd0fe718db3260e317ff
https://doi.org/10.1016/j.econlet.2013.12.029
https://doi.org/10.1016/j.econlet.2013.12.029
Autor:
V. A. Kozlov, V. A. Verbus
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 6:726-729
The effect of spherical quantum objects (scatterers) embedded into semiconductor barriers on the tunnel current flowing through them has been studied. For this purpose, the problem of the scattering of incident and reflected wave functions (damping i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5424fe8067be100063f6f35a612ebb4b
https://doi.org/10.1134/s1027451012090108
https://doi.org/10.1134/s1027451012090108
Publikováno v:
Theoretical and Mathematical Physics. 167:843-855
We consider a chain of SU(2)4 anyons with transitions to a topologically ordered phase state. For half-integer and integer indices of the type of strongly correlated excitations, we find an effective low-energy Hamiltonian that is an analogue of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2bb2c545aa8ffbe52adbb7fdb8ff754
https://doi.org/10.1007/s11232-011-0067-1
https://doi.org/10.1007/s11232-011-0067-1
Autor:
V. A. Verbus, V. A. Kozlov
Publikováno v:
Semiconductors. 44:1499-1503
The effect of spherical quantum objects (scatterers) embedded into semiconductor barriers on the tunnel-current flow through them is studied. For this purpose, the problem of scattering on steplike spherically symmetric potential of the scatterer is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e391d6b097f5f2b8e1880e22388a50f
https://doi.org/10.1134/s1063782610110242
https://doi.org/10.1134/s1063782610110242