Zobrazeno 1 - 10
of 35
pro vyhledávání: '"V. A. Vekshin"'
Autor:
V. O. Vekshin
Publikováno v:
Управленческое консультирование, Vol 0, Iss 3, Pp 179-196 (2024)
The purpose of the study is to analyze the protest activity of the youth of St. Petersburg as a form of political participation. Method. To achieve this goal, a content analysis method was chosen, which includes monitoring protest activity among youn
Externí odkaz:
https://doaj.org/article/2704172b41584950b035dd6ad5e9af80
Autor:
V. O. Vekshin
Publikováno v:
Управленческое консультирование, Vol 0, Iss 12, Pp 158-166 (2024)
This article examines extra-institutional mechanisms of youth politicisation. The aim of this article is to analyse the relevance of extra-institutional mechanisms of youth involvement in political processes. Methods. The method of scientific literat
Externí odkaz:
https://doaj.org/article/f713869d66c14b758262c742d3530f99
Autor:
V. O. Vekshin, D. I. Voynov
Publikováno v:
Управленческое консультирование, Vol 0, Iss 11, Pp 111-122 (2022)
The article presents the results of a study of the state and mood of civil society from the standpoint of a political and sociological approach. The definition of the state of civil society, its features and components is proposed. The complexity and
Externí odkaz:
https://doaj.org/article/240c4aef1455488c9d41472df7ce0d9a
Publikováno v:
Journal of Crystal Growth. 269:1-9
We report on a close correlation between the growth conditions of InN/Al2O3 (0 0 0 1) epilayers grown by plasma-assisted molecular beam epitaxy (MBE), their optical properties in the IR range, and the In clustering in the layers. High-spatial resolut
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::580053a604db78e99b7007dcc9b9535e
https://doi.org/10.1016/j.jcrysgro.2004.05.027
https://doi.org/10.1016/j.jcrysgro.2004.05.027
Publikováno v:
physica status solidi (c). :2846-2850
InN films have been grown by plasma-assisted MBE on Al2O3(0001) substrates using different buffer fabrication techniques: thermo-activated In diffusion into nitridated sapphire during InN buffer annealing and deposition of 20 nm AlxIn1−xN buffer la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5682ce1ad2b01c02a6e7326d7e675704
https://doi.org/10.1002/pssc.200303520
https://doi.org/10.1002/pssc.200303520
Autor:
D. A. Kurdyukov, V. Yu. Davydov, Akio Yamamoto, I. N. Goncharuk, A. V. Sakharov, Sergei Ivanov, Akihiro Hashimoto, Alexander N. Smirnov, J. Graul, J. Aderhold, A. A. Klochikhin, Valentin V. Emtsev, V. A. Vekshin, M. V. Baidakova
Publikováno v:
physica status solidi (b). 240:425-428
We present results of a detailed study of X-ray, photoluminescence, and Raman measurements of hexagonal InN, In-rich In x Ga 1-x N (0.36 < x < 1) alloys, and InN samples annealed in oxygen.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1192348156045ca4ecad475bfe55e8f3
https://doi.org/10.1002/pssb.200303448
https://doi.org/10.1002/pssb.200303448
Autor:
Per-Olof Holtz, V. A. Vekshin, M. G. Tkachman, P. S. Kop’ev, J. P. Bergman, Fredrik Karlsson, Bo Monemar, Sergei Ivanov, T. V. Shubina, V. N. Jmerik, A. A. Toropov
Publikováno v:
physica status solidi (a). 195:537-542
Two-band photoluminescence (PL) and respective absorption and reflection features are observed in GaN/AlGaN MBE-grown quantum well (QW) structures of dominant N polarity with inversion domains (IDs). The PL bands are related to transitions in the reg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::713ed4dea7ff436bb9b8354605407b6f
https://doi.org/10.1002/pssa.200306149
https://doi.org/10.1002/pssa.200306149
Autor:
A. A. Sitnikova, Per-Olof Holtz, Fredrik Karlsson, A. A. Toropov, Sergei Ivanov, V. N. Jmerik, M. G. Tkachman, T. V. Shubina, J. P. Bergman, V. A. Vekshin, Bo Monemar, V. V. Ratnikov
Publikováno v:
physica status solidi (b). 234:919-923
Strain and electric field fluctuations in regions of different polarities in GaN/AlGaN quantum well (QW) structures of dominant N-polarity with inversion domains (IDs) split the photoluminescence (PL) emission into two bands. Micro-PL and time-resolv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::374c29143da166901eafb9e9b8a80cfa
https://doi.org/10.1002/1521-3951(200212)234:3<919::aid-pssb919>3.0.co
https://doi.org/10.1002/1521-3951(200212)234:3<919::aid-pssb919>3.0.co
Autor:
Stefan Ivanov, Hiroshi Harima, D. A. Kurdyukov, J. Aderhold, V. A. Vekshin, J. Graul, Friedhelm Bechstedt, A. V. Mudryi, Akihiro Hashimoto, Valentin V. Emtsev, Eugene E. Haller, Jürgen Furthmüller, A. A. Klochikhin, Akio Yamamoto, V. Yu. Davydov
Publikováno v:
ResearcherID
A survey of most recent studies of optical absorption, photoluminescence, photoluminescence excitation, and photomodulated reflectance spectra of single-crystalline hexagonal InN layers is presented. The samples studied were undoped n-type InN with e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8e23b88831934a3332161fd3bebfb176
https://doi.org/10.1002/1521-3951(200212)234:3<787::aid-pssb787>3.0.co
https://doi.org/10.1002/1521-3951(200212)234:3<787::aid-pssb787>3.0.co
Autor:
Gagik A. Oganesyan, A. S. Usikov, A. A. Klochikhin, V. Yu. Davydov, N. M. Shmidt, Eugene E. Haller, D.S. Poloskin, V. A. Vekshin, V. V. Kozlovskii, Valentin V. Emtsev
Publikováno v:
ResearcherID
The electrical properties of the n-GaN and n-InN, subjected to proton irradiation, are studied. The irradiation of the n-InN results in an increasing concentration of charge carriers, whereas strong compensation effects take place in the proton-irrad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::90ae7012473c0a01632f695be13a6169
https://doi.org/10.1016/s0921-4526(01)00650-0
https://doi.org/10.1016/s0921-4526(01)00650-0