Zobrazeno 1 - 10
of 13
pro vyhledávání: '"V. A. Tkal"'
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 10:231-240
The absolute value and argument of discrete Fourier transform (DFT) coefficients are investigated by analyzing images of test objects and structural defects in single crystals, which are theoretically calculated from modified Indenbom–Chamrov equat
Autor:
V. A. Tkal, I. A. Zhukovskaya
Publikováno v:
Inorganic Materials. 50:1444-1454
The most effective methods of digital processing based on the analysis of the brightness and frequency characteristics of the topographic and polarization-optical contrasts of structural defects are considered by example of single crystals of Si and
Autor:
M. N. Petrov, V. A. Tkal
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 5:419-425
A simple procedure for quantitative estimation of the quality and efficiency of digital processing based on discrete wavelet transform (DWT) of X-ray topographic and polarization-optical images for single crystal structure defects is proposed. Digita
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 4:25-31
The procedure for eliminating the background nonuniformity of the polarization-optical contrast of a 6H-SiC single crystal by digital processing based on the frequency analysis of images is considered in this paper. This procedure involves separating
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 3:797-803
We present computer simulation results for the images of various types of structural defects in 6H-SiC and Si single crystals with taking into account noise factors (background heterogeneity and contrast graininess). If we know the parameters used to
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 1:277-285
For a 6H-SiC single crystal, experimental results of the digital processing of topographic images with various dynamic ranges are given. In this case, wavelet analysis was used. The images were obtained by x-ray topography based on the Borrmann effec
Publikováno v:
Physics of the Solid State. 48:2084-2090
Section topographs of edge and screw dislocations with an axis along [0001] in 6H-SiC are taken and interpreted, and the image formation is explained for this case. The contrast induced by various arrangements of dislocations within the Borrmann tria
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 2:931-933
The possibility of detecting growth striations by digital processing based on analysis of the brightness and frequency characteristics of images has been demonstrated by the example of x-ray topographic contrast of a GaSb(Si) single crystal. It has b
Publikováno v:
Refractories. 33:186-187
Publikováno v:
Journal of Applied Spectroscopy. 34:237-241