Zobrazeno 1 - 10
of 18
pro vyhledávání: '"V. A. Shenderovskii"'
Autor:
V. A. Shenderovskii, V. V. Kolomoets, N. V. Stuchinska, A. E. Gorin, V. N. Ermakov, V. V. Baidakov, D. P. Tunstall
Publikováno v:
physica status solidi (b). 198:149-152
Strain-induced metal-insulator (MI) transitions have been observed in degenerately doped Si:Sb and Ge:Sb crystals at T = 4.2 K and for extremely high uniaxial pressures up to 5 GPa. It is shown that in both Si and Ge the transition from a metallic-ty
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f26226c1124f3be4601d383ed62750c2
https://doi.org/10.1002/pssb.2221980121
https://doi.org/10.1002/pssb.2221980121
Publikováno v:
physica status solidi (b). 159:837-844
The effect of appearance of a constant current (at a closed circuit) in anisotropic semiconductors at propagation of longitudinal oscillations with an external carrier-heating electric field applied to the sample is investigated. The departure of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb3b251931ff67fedbf9031302b72d3f
https://doi.org/10.1002/pssb.2221590231
https://doi.org/10.1002/pssb.2221590231
Publikováno v:
physica status solidi (b). 157:K19-K22
Quand Cd dans CdTe est substitue par des impuretes d'elements de transition 3d, les modes localises apparaissent en dehors du spectre continu des phonons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::636c200e8c000d5cc72e54d165d7cdc6
https://doi.org/10.1002/pssb.2221570152
https://doi.org/10.1002/pssb.2221570152
Autor:
V. A. Shenderovskii, A. I. Skitsko, V. V. Khomyak, L. S. Solonchuk, P. N. Gorlei, V. V. Koshman
Publikováno v:
physica status solidi (b). 161:K91-K93
L'analyse des differentes formules concernant cet effet Hall montre que la dependance E LH ∼H doit etre caracteristique des cristaux a basse symetrie. Ceci confirme les conclusions de la theorie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8597908eef8e16dc84e503479a7c9375
https://doi.org/10.1002/pssb.2221610249
https://doi.org/10.1002/pssb.2221610249
Autor:
P. N. Gorley, V. A. Shenderovskii
Publikováno v:
Physica Status Solidi (a). 53:K189-K194
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8013a58d6520a5ea3309485c31aea773
https://doi.org/10.1002/pssa.2210530255
https://doi.org/10.1002/pssa.2210530255
Autor:
V. V. Gorlei, V. A. Shenderovskii
Publikováno v:
Journal of engineering physics. 40:405-408
A study is made of the stability of convective fluid flow caused by an external temperature gradient and heat sources uniformly distributed in the fluid.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9a824bf6c5e1fff6ff1a5a38c66ea47
https://doi.org/10.1007/bf00825380
https://doi.org/10.1007/bf00825380
Publikováno v:
physica status solidi (b). 72:41-50
Expressions for the independent galvanomagnetic resistance tensor components in weak magnetic fields are obtained for p-Te type semiconductors, using a variational method. Carrier scattering by optical lattice vibrations is considered without using t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c69476a16cf73002c2da9219ab63aa8
https://doi.org/10.1002/pssb.2220720103
https://doi.org/10.1002/pssb.2220720103
Autor:
V. A. Shenderovskii, Petro M. Tomchuk
Publikováno v:
physica status solidi (b). 63:709-718
An effect is investigated of the energy band non-parabolicity on the scattering and transformation processes of electromagnetic waves on fluctuations in the non-equilibrium semiconductor plasma. It is shown that the deviation of the carrier energy di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2260be294a785eaa319e7c2cc746fa5d
https://doi.org/10.1002/pssb.2220630235
https://doi.org/10.1002/pssb.2220630235
Publikováno v:
physica status solidi (b). 98:463-471
The molar (vs. x), temperature and concentration dependences of mobility U = σR in ZnxHg1–xSe solid solutions with degenerate carrier concentrations are studied over wide ranges of temperature (77 to 300 K), concentration (1 × 1017 to 6 × 1018cm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8d5a64f6eac79b9922e05f4cd2a5f45
https://doi.org/10.1002/pssb.2220980208
https://doi.org/10.1002/pssb.2220980208
Publikováno v:
physica status solidi (b). 146:671-681
A theory of transport phenomena for anisotropic semiconductors is developed in which inelastic carrier scattering is dominating and the Debye screening radius of defects is large compared with the carrier mean free path. The effect of edge dislocatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d38653b6d8cec57e889a5aa0eedd2e71
https://doi.org/10.1002/pssb.2221460227
https://doi.org/10.1002/pssb.2221460227