Zobrazeno 1 - 10
of 40
pro vyhledávání: '"V. A. Salmanov"'
Publikováno v:
Russian Physics Journal. 65:1475-1481
Publikováno v:
International Journal of Modern Physics B. 37
In this study, we experimentally study the dependence of the intensity of laser radiation incident on and transmitted through a layered InSe crystal. A picosecond YAG:Nd3+ laser with a parametric light generator was used as a light source, making it
Publikováno v:
Modern Physics Letters B. 36
Nonlinear absorption of light and its time evolution in InSe under the influence of picosecond laser excitation have been investigated experimentally. It was shown that the decrease in exciton absorption in InSe at high levels of optical excitation i
Publikováno v:
Optics and Spectroscopy. 128:1978-1982
Intense luminescence and nanosecond relaxation of photocurrent upon strong optical excitation have been observed in CuIn5S8 crystals grown by slow melt cooling at a constant temperature gradient. Three emission bands with energies of 1.52, 1.48, and
Publikováno v:
Optics and Spectroscopy. 128:501-504
The nonlinear absorption in GaSe crystals at high optical excitation levels is experimentally studied. A Nd:YAG laser (first and second harmonics, 1064 and 532 nm) and a liquid laser (tuning range 594–643 nm) were used as excitation sources. It is
Publikováno v:
Optics and Spectroscopy. 126:458-462
GaS thin films have been grown by the SILAR method, their structures have been analyzed, and their optical and photoelectric properties have been investigated. The internal structure of the samples obtained have been studied using X-ray diffraction (
Autor:
R. M. Mamedov, A. G. Kyazym-zade, V. M. Salmanov, A. A. Salmanova, A. G. Guseinov, F. M. Akhmedova, Z. A. Agamaliev
Publikováno v:
Technical Physics. 64:555-558
Conductivity inversion in thin n-InSe films under intense pulsed laser irradiation was obser. A p–n structure based on indium selenide formed between irradiated and nonirradiated regions of a thin-film sample. It was confirmed by EDAX analysis that
Autor:
V. M. Salmanov, A. G. Guseinov, A. A. Salmanova, A. Z. Magomedov, F. Sh. Akhmedova, R. M. Mamedov, L. G. Gasanova
Publikováno v:
Russian Journal of Physical Chemistry A. 92:1790-1793
The formation of indium and gallium monoselenide thin films under the action of a powerful Nd : YAG laser is described. The use of laser radiation allows the production of substances of high purity and with accurately controlled composition. After Ga
Autor:
A. G. Guseinov, A. A. Salmanova, V. M. Salmanov, R. M. Mamedov, A. G. Kyazym-zade, F. Sh. Akhmedova
Publikováno v:
Russian Physics Journal. 60:1680-1683
The successive ionic layer adsorption and reaction (SILAR) method is used to prepare InSe thin films and InSe nanoparticles. Shapes and sizes of the obtained nanoparticles are investigated using a scanning electron microscope and an atomic force micr
Publikováno v:
Russian Physics Journal. 60:1747-1751
The type of electrical conductivity of А1В35С68 semiconductor compounds with defective crystalline structure is modified by the influence of powerful laser radiation. It is shown that at certain power and wavelength of laser radiation acting on th