Zobrazeno 1 - 10
of 44
pro vyhledávání: '"V. A. Nevedomskii"'
Autor:
Innokenty I. Novikov, V. N. Nevedomskii, E. S. Kolodeznyi, V. V. Andryushkin, A. V. Babichev, A. G. Gladyshev, L. Ya. Karachinsky, D. V. Denisov, A. Yu. Egorov
Publikováno v:
Technical Physics. 65:2047-2050
A new method for the formation of three-dimensional quantum-dimensional InGaP(As) islands is proposed, which consists in replacing phosphorus with arsenic in an InGaP layer deposited on GaAs directly during epitaxial growth. It is shown that the repl
Autor:
L. Ya. Karachinsky, A. Yu. Egorov, V. N. Nevedomskii, A. V. Babichev, D. V. Denisov, Innokenty I. Novikov, E. S. Kolodeznyi, A. G. Gladyshev, Vladislav E. Bougrov, S. S. Rochas, V. V. Andryushkin
Publikováno v:
Technical Physics Letters. 46:1128-1131
We have studied heterostructures based on short-period InGaAs/InGaAlAs superlattices (SLs) manufactured by molecular-beam epitaxy on InP substrates, intended for use as active regions in vertical-cavity surface-emitting lasers operating in a 1.3-μm
Autor:
A. V. Ershov, D. N. Goryachev, E. V. Beregulin, M. A. Elistratova, Olga M. Sreseli, N. A. Bert, V. N. Nevedomskii
Publikováno v:
Semiconductors. 54:1315-1319
The properties of multilayer α-Si(Ge)/SiO2 nanostructures deposited onto p-Si substrates and annealed at various temperatures are investigated. The total nanolayer thickness is no larger than 300–350 nm. It is found that despite the formation of c
Autor:
M. Z. Shvarts, Sergey A. Mintairov, Alexey M. Nadtochiy, R. A. Salii, V. N. Nevedomskii, Nikolay A. Kalyuzhnyy
Publikováno v:
Semiconductors. 54:1267-1275
InAs and In0.8Ga0.2As quantum dots in a GaAs matrix as well as GaAs solar cells with quantum dots of both types in the i-region are obtained by metalorganic vapor-phase epitaxy. As a result of investigations by photoluminescence and transmission elec
Autor:
I. N. Yassievich, A. N. Yablonsky, V. N. Nevedomskii, Olga M. Sreseli, Aleksey Nezhdanov, N. A. Bert, A. I. Lihachev, Aleksandr Mashin, A. V. Ershov, Boris A. Andreev
Publikováno v:
Semiconductors. 54:181-189
Structures with Ge/Si nanoparticles (quantum dots) in an aluminum-oxide matrix are of interest due to the combination of two basic semiconductors and the use of a matrix with a high permittivity and strong oxygen–metal bonding. In this study, multi
Publikováno v:
Russian Journal of General Chemistry. 89:2453-2457
The processes occurring during the mechanical activation of a-Fe2O3 (hematite) in the presence of oleic acid in a centrifugal-planetary mill have been investigated. Mechanical activation for 10 h afforded hematite powder with particles size of 10–4
Publikováno v:
Chemical Papers. 74:1161-1170
In this study, the effect of mechanical activation of coprecipitated hydroxide precursor on synthesis of gadolinium zirconate Gd2Zr2O7 has been studied. Mechanical activation of the precursor has been performed in an AGO-2 laboratory centrifugal-plan
Autor:
V. N. Nevedomskii, R. V. Levin, G. G. Zegrya, B. V. Pushnyi, A. A. Usikova, N. L. Bazhenov, N. V. Pavlov, K. D. Mynbaev, I. V. Fedorov
Publikováno v:
Technical Physics. 64:1509-1514
The capabilities of metalorganic vapor-phase epitaxy (MOVPE) in fabrication of structures with thin (1–2 nm) alternating InAs/GaSb layers on a GaSb substrate are studied. The characteristics of these structures were examined using transmission elec
Autor:
M. V. Baidakova, V. N. Nevedomskii, S. N. Golyandin, N. A. Germanov, A. V. Nashchekin, S. V. Mochalov, S. A. Pul’nev, V. P. Ulin, M. K. Rabchinskii, N. V. Ulin, M. E. Kompan
Publikováno v:
Technical Physics. 64:884-892
It was shown that the interaction of silver cations in alkaline aqueous solutions with various kinds of silicates, regardless of their chemical and aggregation state, leads to the formation of an exclusively disilicate form of silver salt. We develop
Autor:
V. N. Nevedomskii, A. V. Babichev, E. S. Kolodeznyi, A. S. Kurochkin, L. Ya. Karachinsky, A. G. Gladyshev, Innokenty I. Novikov, A. N. Sofronov, A. Yu. Egorov
Publikováno v:
Semiconductors. 53:345-349
The results of experiments on the fabrication (by molecular-beam epitaxy) and investigation of the heterostructures of a two-frequency quantum-cascade laser produced on the basis of a heteropair of In0.53Ga0.47As/Al0.48In0.52As solid solutions on an