Zobrazeno 1 - 4
of 4
pro vyhledávání: '"V. A. Mishournyi"'
Autor:
V. A. Mishournyi, Carlos Soubervielle-Montalvo, Máximo López-López, I.C. Hernandez, S. Gallardo, V.H. Méndez-García, F. de Anda, Y. Kudriatsev, Andrei Yu Gorbatchev
Publikováno v:
Journal of Crystal Growth. 311:1650-1654
In this work the incorporation of oxygen in Al 0.2 Ga 0.3 In 0.5 P:Be layers lattice-matched to GaAs grown by solid source molecular beam epitaxy (SSMBE) was studied by secondary ion mass spectrometry (SIMS) and photoluminescence (PL) spectroscopy. B
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec7f72c9613e7c1e67c6d7eb5a02835c
https://doi.org/10.1016/j.jcrysgro.2008.10.059
https://doi.org/10.1016/j.jcrysgro.2008.10.059
Publikováno v:
ChemInform. 27
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0c3f928fbff7209c398f721fc28b69b
https://doi.org/10.1002/chin.199604290
https://doi.org/10.1002/chin.199604290
Publikováno v:
Journal of The Electrochemical Society. 142:L189-L191
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4d4f01d34ef281d82914a696564e36f
https://doi.org/10.1149/1.2050040
https://doi.org/10.1149/1.2050040
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25:926
Molecular beam epitaxy (MBE) has been employed almost entirely for the growth of arsenic compounds due to the lack of a suitable suitable solid phosphorous source. Advanced phosphide epitaxy has only been performed by metal organic chemical vapor dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9acd41ce3698cfcc5c4f2783dd2240a4
https://doi.org/10.1116/1.2718963
https://doi.org/10.1116/1.2718963