Zobrazeno 1 - 8
of 8
pro vyhledávání: '"V. A. Mishournyi"'
Autor:
V. A. Mishournyi, Carlos Soubervielle-Montalvo, Máximo López-López, I.C. Hernandez, S. Gallardo, V.H. Méndez-García, F. de Anda, Y. Kudriatsev, Andrei Yu Gorbatchev
Publikováno v:
Journal of Crystal Growth. 311:1650-1654
In this work the incorporation of oxygen in Al 0.2 Ga 0.3 In 0.5 P:Be layers lattice-matched to GaAs grown by solid source molecular beam epitaxy (SSMBE) was studied by secondary ion mass spectrometry (SIMS) and photoluminescence (PL) spectroscopy. B
Publikováno v:
ChemInform. 27
Publikováno v:
Journal of The Electrochemical Society. 142:L189-L191
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25:926
Molecular beam epitaxy (MBE) has been employed almost entirely for the growth of arsenic compounds due to the lack of a suitable suitable solid phosphorous source. Advanced phosphide epitaxy has only been performed by metal organic chemical vapor dep
Autor:
Duan, Yong, Zeng, Tianjian, Sun, Tao, Tong, Ling, Chen, Anran, Zhang, Jin, Wang, Rongfei, Wang, Chong, Yang, Yu
Publikováno v:
NANO; May2018, Vol. 13 Issue 5, pN.PAG-N.PAG, 29p
Publikováno v:
Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; May/Jun2007, Vol. 25 Issue 3, p926-930, 5p, 4 Color Photographs, 2 Graphs
Publikováno v:
Surface Review & Letters; Oct-Dec2002, Vol. 9 Issue 5/6, p1741, 5p
Publikováno v:
Applied Physics Letters; 5/21/2007, Vol. 90 Issue 21, p211115, 3p, 3 Graphs