Zobrazeno 1 - 6
of 6
pro vyhledávání: '"V. A. Manasson"'
Publikováno v:
Semiconductors. 37:172-177
Electrical properties of a p +-Bi2Te3-p-GaSe isotype heterostructure fabricated for the first time are reported. A qualitative model is suggested which explains the emergence of negative differential conductivity for a forward-biased structure and fo
Publikováno v:
Technical Physics Letters. 28:660-663
The electrical properties of a p-Bi2Te3-p-GaSe isotype heterostructure synthesized for the first type were studied. A qualitative model is proposed which explains the appearance of a negative differential conductivity in the structure under forward (
Publikováno v:
Solid-State Electronics. 33:1355-1358
The spectral dependence of the photoresponse in a surface-barrier structure formed on the silicon wafer with one side previously treated in order to introduce defects in it, has been investigated. It was found that the spectral dependences differ con
Publikováno v:
Electronics Letters. 26:664-664
A new heterojunction photodiode with high polarisation sensitivity in the 632.8 nm spectral region has been fabricated. The heterojunction was prepared on a p-type GaSe wafer by depositing an n-type In/sub 2/O/sub 3/ layer. A pleochroism coefficient
Publikováno v:
Physica Status Solidi (a). 108:K115-K118
Publikováno v:
Physica Status Solidi (a). 115:K35-K37
On montre que le caractere de l'injection d'un porteur de charge minoritaire peut etre different dans l'heterojonction de type anisotrope et dans la structure semiconducteur-isolant-semiconducteur. Ceci met en evidence une variation aigue du coeffici