Zobrazeno 1 - 10
of 11
pro vyhledávání: '"V. A. Kulbachinskiĭ"'
Autor:
Diptasikha Das, K. Malik, Subarna Das, P. Singha, A. K. Deb, V. A. Kulbachinskii, Raktima Basu, Sandip Dhara, Arup Dasgupta, S. Bandyopadhyay, Aritra Banerjee
Publikováno v:
AIP Advances, Vol 8, Iss 12, Pp 125119-125119-12 (2018)
Anharmonic lattice vibration in metallic and semiconducting Sb2Te3 is investigated using temperature dependent Raman spectroscopic studies, synchrotron powder diffraction, and heat-capacity measurements. Thermal variation of structural parameters div
Externí odkaz:
https://doaj.org/article/7ef8de7409bc47a28ca692745fb6c3d9
Autor:
V. A. Kulbachinskii, B. M. Bulychev, V. G. Kytin, A. V. Krechetov, E. A. Konstantinova, R. A. Lunin
Publikováno v:
Advances in Condensed Matter Physics, Vol 2008 (2008)
In the present study, the results of investigation of physical properties of heterofullerides A3−xMxC60 (A=K, Rb, Cs, M=Be, Mg, Ca, Al, Fe, Tl, x=1,2); as well as RbCsTlC60, KCsTlC60, and KMg2C60 are described. All of the fullerides were synthesize
Externí odkaz:
https://doaj.org/article/c5154ad3fb1b497abcdc1a2cbd749006
Publikováno v:
Journal of Experimental and Theoretical Physics. 110:618-621
The effect of gallium on the temperature dependences (5 K ≤ T ≤ 300 K) of Seebeck coefficient α, electrical conductivity σ, thermal conductivity k, and thermoelectric efficiency Z of mixed p-(Bi0.5Sb0.5)2Te3 semiconductor single crystals is stu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d37a32c0d564dbe78ea7ca77918a6ed9
https://doi.org/10.1134/s1063776110040096
https://doi.org/10.1134/s1063776110040096
Autor:
Yu. A. Danilov, Vladimir V. Rylkov, V. A. Kulbachinskiĭ, B. A. Aronzon, P. V. Gurin, B. N. Zvonkov, A. B. Davydov
Publikováno v:
Journal of Experimental and Theoretical Physics. 105:181-184
Samples containing InGaAs quantum wells with p-type conductivity delta-doped by Mn were synthesized and studied. Magnetic moment measurements on a SQUID magnetometer revealed the presence of ferromagnetism at temperatures T from 4.2 to 400 K. Anomalo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dccc609548d2c5be8e8fb35048da2c87
https://doi.org/10.1134/s1063776107070400
https://doi.org/10.1134/s1063776107070400
Publikováno v:
Journal of Experimental and Theoretical Physics. 105:21-26
Thermoelectric properties of single crystals of a new dilute magnetic semiconductor p-Sb2 − xCrxTe3 are studied in the temperature interval 7–300 K. The temperature dependences of the thermal conductivity are measured. The Seebeck coefficient S i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16a6110170d9a806471df40ee2748dae
https://doi.org/10.1134/s1063776107070060
https://doi.org/10.1134/s1063776107070060
Autor:
V. A. Kulbachinskiĭ, P. V. Gurin, Koji Onomitsu, Yu. A. Danilov, Yoshiji Horikoshi, E. I. Malysheva
Publikováno v:
Journal of Experimental and Theoretical Physics. 105:170-173
GaAs structures with implanted Mn and, additionally, with Mg for increasing the hole concentration in the implanted Mn layer are synthesized and investigated. SQUID magnetometer measurements revealed the existence of ferromagnetism in the temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e1407ecd4756e3242ecdbbacce2bf3d
https://doi.org/10.1134/s1063776107070370
https://doi.org/10.1134/s1063776107070370
Autor:
A. B. Davydov, P. V. Gurin, V. V. Rylkov, O. V. Vikhrova, Koji Onomitsu, Yoshiji Horikoshi, A. B. Granovskiĭ, Yu. A. Danilov, B. N. Zvonkov, V. A. Kulbachinskiĭ, B. A. Aronzon
Publikováno v:
JETP Letters. 85:27-33
Magnetic and magnetotransport properties of GaAs(δ〈Mn〉)/In0.17Ga0.83As/GaAs quantum wells with different Mn concentrations are studied. The delta-doped manganese layer has been separated from the GaAs quantum well with a spacer with an optimal t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1154522e6f1d77ee28d2c12cfe432dba
https://doi.org/10.1134/s0021364007010067
https://doi.org/10.1134/s0021364007010067
Publikováno v:
Physics of the Solid State. 48:833-840
The Fermi surface anisotropy of (Bi1−x Sbx)2Te3 single crystals (0.25 ≤ x ≤ 1) was studied by analyzing the angular dependence of the frequency of Shubnikov-de Haas oscillations and the effect of tin and silver doping on the thermoelectric powe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ee5e096cd95f142da417344414f9c3f
https://doi.org/10.1134/s1063783406050040
https://doi.org/10.1134/s1063783406050040
Autor:
B. N. Zvonkov, V. A. Casian, V. A. Rogozin, V. A. Kulbachinskiĭ, Vladimir G. Kytin, R. A. Lunin, Z. M. Dashevsky
Publikováno v:
Semiconductors. 40:210-216
Persistent IR photoconductivity in InAs/GaAs structures with layers of QDs with a p-and n-type conductivity was studied. At the initial stage, after the illumination is switched off, the relaxation of photoconductivity follows a logarithmic law. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3642b4309f5adb0e59dba28a2ca3d927
https://doi.org/10.1134/s1063782606020187
https://doi.org/10.1134/s1063782606020187
Publikováno v:
Journal of Experimental and Theoretical Physics. 105:174-176
We investigate the lateral low-temperature electron transport in shallow pseudomorphous two-sided δ-doped GaAs/In0.12Ga0.88As/GaAs quantum wells (QWs) depending on the QW width, doping level, and the presence of a thin central AlAs barrier. Such a b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3229eb00e1a07125d8d2a9bfb5039932
https://doi.org/10.1134/s1063776107070382
https://doi.org/10.1134/s1063776107070382