Zobrazeno 1 - 10
of 30
pro vyhledávání: '"V. A. Karzanov"'
Publikováno v:
Experimental and Clinical Gastroenterology. :252-258
Introduction. Clinical manifestations of inflammatory bowel diseases (IBD) are limited not only by the gastrointestinal tract syndromes, but also by a wide range of extra-intestinal manifestations, which include skin manifestations. Skin lesions in I
Autor:
M. N. Kokorina, A. K. Koryttseva, E. V. Zaitseva, A. V. Budruev, V. V. Karzanov, E. V. Suleimanov, A. E. Baranchikov
Publikováno v:
Inorganic Materials. 57:1221-1233
Publikováno v:
Physics of the Solid State. 63:449-452
The data on the EPR, photoluminescence (PL), and current transfer in porous silicon (PS) on KDB-0.3 and KES-0.01 Si, which was oxidized by 10-min isochronous thermal annealing in air at temperatures Tann from 20 to 900°C, as well as in HNO3, are pre
Autor:
D. S. Korolev, S. V. Tikhov, O. N. Gorshkov, Alexey Mikhaylov, Panagiotis Dimitrakis, Alexey Belov, Panagiotis Karakolis, Ivan Antonov, David Tetelbaum, V. V. Karzanov
Publikováno v:
Microelectronic Engineering. :134-138
Bipolar resistive switching of the metal-insulator-semiconductor (MIS) capacitor-like structures with the inert Au top electrode and Si3N4 dielectric nanolayer (6 nm thick) has been investigated. The effect of highly doped n+-Si substrate is revealed
Publikováno v:
Physics of the Solid State. 61:285-287
Porous silicon is formed using pulsed current with a pulse modulation varied in a range spanning five orders of magnitude, starting from a hundredth of a second, in order to achieve modulation of the properties of PS on the nanoscale. The PS is chara
Publikováno v:
Technical Physics Letters. 44:1160-1162
It has been experimentally established that the time of switching by triangular pulses in Ti—TiN–ZrO2(Y)–Zr–Au memristor structures from the state of low resistance to the state of high resistance is inversely proportional to the voltage rise
Publikováno v:
Physics of the Solid State. 59:251-253
We present the data on changes in the properties of porous silicon formed at the current pulse modulation in the range of 0.1–1 Hz with the aim to modulate the properties of porous silicon in a nanoscale range. It is demonstrated that the use of th
Autor:
A. I. Bobrov, V. V. Podol’skii, V. V. Karzanov, E. D. Pavlova, A. A. Tronov, E. S. Demidov, V. P. Lesnikov, N. V. Malekhonova
Publikováno v:
JETP Letters. 100:719-723
New data on the structure of the diluted magnetic semiconductor Si:Mn with the Curie point to 500 K synthesized by the laser method have been presented. High-resolution electron microscopy and diffraction in the directions 〈110〉 and 〈100〉 of
Autor:
S. Yu. Zubkov, A. V. Ershov, A. V. Boryakov, A. S. Vikhorev, D. E. Nikolichev, V. V. Karzanov
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 7:875-883
The results of integrated studies of thin-film structures based on silicon and hafnium dioxides on silicon grown by electron-beam evaporation in vacuum are presented. The surface morphology, structural and phase composition of these films depending o
Autor:
Panagiotis Dimitrakis, Panagiotis Karakolis, V. V. Karzanov, D. S. Korolev, M. N. Koryazhkina, David Tetelbaum, S. V. Tikhov, O. N. Gorshkov, Alexey Mikhaylov, Ivan Antonov, Alexey Belov
Publikováno v:
Journal of Physics: Conference Series. 993:012028
Bipolar resistive switching in metal-insulator-semiconductor (MIS) capacitor-like structures with an inert Au top electrode and a Si3N4 insulator nanolayer (6 nm thick) has been observed. The effect of a highly doped n +-Si substrate and a SiO2 inter