Zobrazeno 1 - 8
of 8
pro vyhledávání: '"V. A. Ivanovskiy"'
Publikováno v:
Journal of High Energy Physics, Vol 2021, Iss 4, Pp 1-41 (2021)
Abstract We develop a novel bi-harmonic N $$ \mathcal{N} $$ = 4 superspace formulation of the N $$ \mathcal{N} $$ = 4 supersymmetric Yang-Mills theory (SYM) in four dimensions. In this approach, the N $$ \mathcal{N} $$ = 4 SYM superfield constraints
Externí odkaz:
https://doaj.org/article/53c3137b4d72499caecb7097db0767c3
Publikováno v:
Journal of High Energy Physics, Vol 2021, Iss 4, Pp 1-41 (2021)
Journal of High Energy Physics
Journal of High Energy Physics
We develop a novel bi-harmonic $\mathcal{N}=4$ superspace formulation of the $\mathcal{N}=4$ supersymmetric Yang-Mills theory (SYM) in four dimensions. In this approach, the $\mathcal{N}=4$ SYM superfield constraints are solved in terms of on-shell $
Autor:
E.A. Orlova, D.A. Kosilov, S. B. Yakimov, A. A. Sabirov, V. N. Ivanovskiy, T.R. Dolov, V.V. Вylkov, NK 'Rosneft'
Publikováno v:
Equipment and Technologies for Oil and Gas Complex. :7-16
Autor:
A. V. Bulat, V. N. Ivanovskiy, D. A. Kosilov, D. A. Minchenko, A. S. Topolnikov, A. R. Garifullin, A. B. Noskov, A. A. Sabirov, S. B. Yakimov
Publikováno v:
Neftyanoe khozyaystvo - Oil Industry. 11:64-67
Publikováno v:
Journal of High Energy Physics, Vol 2020, Iss 4, Pp 1-24 (2020)
Journal of High Energy Physics
Journal of High Energy Physics
We present the explicit superfield realizations of the hidden $SU(4)$ and $O(5)$ $R$-symmetries in $4D, {\cal N}=4$ and $5D, {\cal N}=2$ supersymmetric Yang-Mills theories in the harmonic superspace approach. The $R$-symmetry transformations are cons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4703a24d10e1c68f105521852a4aa9f7
http://arxiv.org/abs/2001.01649
http://arxiv.org/abs/2001.01649
Publikováno v:
Neftyanoe khozyaystvo - Oil Industry. :52-55
Publikováno v:
Journal of Physics: Conference Series. 661:012066
Physical basis of using the controlled defect formation in InGaAs heteroepitaxial layers to vary the carrier lifetime is considered. It is shown that the lifetime of nonequilibrium carriers in the base layers of a diode can be controllably varied fro
Publikováno v:
Journal of Physics: Conference Series; 2015, Vol. 661 Issue 1, p1-1, 1p