Synthesis of Morphologically Developed InGaN Nanostructures on Silicon: Influence of the Substrate Temperature on the Morphological and Optical Properties

Autor: V. O. Gridchin, K. P. Kotlyar, Rodion R. Reznik, N. V. Kryzhanovskaya, G. E. Cirlin, S. V. Morozov

Publikováno v: Semiconductors. 54:1075-1077

The study concerns the issue of how the morphological characteristics and optical properties of morphologically branched InGaN nanostructures grown on the Si(111) surface by molecular-beam epitaxy depend on the substrate temperature. It is shown that

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::932a04906bc83fa10954b24e82e453e5
https://doi.org/10.1134/s1063782620090237

III-V nanowires with quantum dots: MBE growth and properties

Autor: V O Gridchin, K. P. Kotlyar, G. E. Cirlin, A. I. Khrebtov, Igor V. Ilkiv, Rodion R. Reznik, L Leandro, Nika Akopian, N. V. Kryzhanovskaya, I. P. Soshnikov, Yu. B. Samsonenko

Publikováno v: Reznik, R R, Kotlyar, K P, Gridchin, V O, Ilkiv, I V, Khrebtov, A I, Samsonenko, Y B, Soshnikov, I P, Kryzhanovskaya, N V, Leandro, L, Akopian, N & Cirlin, G E 2021, ' III-V nanowires with quantum dots: MBE growth and properties ', Journal of Physics: Conference Series, vol. 2015, no. 1, 012124 . https://doi.org/10.1088/1742-6596/2015/1/012124

We demonstrate growth of AlGaAs NWs with GaAs QDs and InP NWs with InAsP QDs on silicon substrates. Results of GaAs QDs optical properties study have shown that these objects are sources of single photons. In case of InP NWs with InAsP QDs, the resul

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1e9724d7a6792f91054fe76c2c03d798
https://orbit.dtu.dk/en/publications/40b99544-ecbf-41fa-b6f9-c8da135cb126

Separation of III-N partially-coalesced nanowire arrays from Si substrate

Autor: V V Lendyashova, K P Kotlyar, V O Gridchin, R R Reznik, A I Lihachev, K Yu Shubina, T N Berezovskaya, E V Nikitina, I P Soshnikov, G E Cirlin

Publikováno v: Journal of Physics: Conference Series. 2086:012191

In modern optoelectronics, arrays or single nanowires (NWs) of III-N materials, in particular InGaN, separated from the original substrates are used to fabricate light-emitting diodes or single photon sources. This work describes a technology of sepa

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ba5c645313a891de98bc7f115127ade6
https://doi.org/10.1088/1742-6596/2086/1/012191

III-V nanostructures with different dimensionality on silicon

Autor: R R Reznik, K P Kotlyar, V O Gridchin, I V Ilkiv, A I Khrebtov, Yu B Samsonenko, I P Soshnikov, N V Kryzhanovskaya, L Leandro, N Akopian, G E Cirlin

Publikováno v: Journal of Physics: Conference Series. 2103:012121

The possibility of AlGaAs nanowires with GaAs quantum dots and InP nanowires with InAsP quantum dots growth by molecular-beam epitaxy on silicon substrates has been demonstrated. Results of GaAs quantum dots optical properties studies have shown that

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::13f35a27d70de5ec9ce5a51fc09bee82
https://doi.org/10.1088/1742-6596/2103/1/012121

Selective-area growth and optical properties of GaN nanowires on patterned SiOx/Si substrates

Autor: L N Dvoretckaia, V. O. Gridchin, N V Kryzhanovskaya, K P Kotlyar, A. V. Parfen’eva, Ivan Mukhin, D S Shevchuk, G. E. Cirlin, R. R. Reznik, A S Dragunova

Publikováno v: Journal of Physics: Conference Series. 1851:012006

We present the results of selective-area growth of GaN nanowires by molecular beam epitaxy on patterned SiOx/Si substrates without using seed layers. The morphological and optical properties of selectively grown GaN nanowires are compared to the prop

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1ed1370e345e8e2aeded065e5d214710
https://doi.org/10.1088/1742-6596/1851/1/012006