Zobrazeno 1 - 10
of 43
pro vyhledávání: '"V. A. Gorushko"'
Свойства, диагностика и применение полупроводниковых материалов и структур на их основе Обоснованы режимы формирования силицида плати
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1594::619905cbbe2008fe756e26e562ea2eed
http://elib.bsu.by/handle/123456789/215206
http://elib.bsu.by/handle/123456789/215206
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 18, Iss 3, Pp 20-27 (2020)
The paper is dedicated to influence of the rapid thermal treatment of the gate dielectric at a temperature of ~1100 °С on the electrical parameters of the programmable time device with a correction of 512PS8. As the analyzed parameters of the given
Externí odkaz:
https://doaj.org/article/664c98bb8bd346e7bcd4656959dd7db1
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 18, Iss 3, Pp 88-96 (2020)
The paper is dedicated to investigation of the influence of rapid thermal treatment on the microstructure of platinum silicide. The Pt films 43.7 nm thick were applied on the substrates of the monocrystal silicon by means of the magnetronic sputterin
Externí odkaz:
https://doaj.org/article/f20f214e189546aa8254526220bdc96d
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 18, Iss 2, Pp 105-111 (2020)
The paper is purposed to establish the principles of the micro-structural changes of Pt-Si system during the rapid thermal treatment. The Pt films 43.7 nm thick were applied on the substrates of mono-crystal silicon KEF 0.5 with orientation (111) by
Externí odkaz:
https://doaj.org/article/08c549cc8af84c598d7810a0cd5c5899
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 5, Pp 99-103 (2019)
Приведены результаты исследований влияния быстрой термической обработки подзатворного диэлектрика на параметры мощных p - и n -канальны
Externí odkaz:
https://doaj.org/article/56eb8991d3c342d19b8e350da62b91fe
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 1, Pp 62-67 (2019)
The results of studying of the impact of formation modes of platinum silicide using qiuck heat treatment on electrophysical parameters of Schottky diodes are presented. It is shown that this treatment, as compared to the traditional one, allows at th
Externí odkaz:
https://doaj.org/article/a111f7f504e24eec8cdedaa243c9d2c7
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 8, Pp 88-92 (2019)
Assessment is performed of the permissible nonuniformity of irradiation and temperature scatter as per the wafer area during the rapid thermal treatment, not causing the thermal stresses in it, resultant in the plastic melting or silicon disruption.
Externí odkaz:
https://doaj.org/article/b434c8bce7c447e4a99cd5f47cdd9597
Publikováno v:
Pribory i Metody Izmerenij, Vol 9, Iss 4, Pp 308-313 (2018)
The key element determining stability of the semiconductor devices is a gate dielectric. As its thickness reduces in the process of scaling the combined volume of factors determining its electrophysical properties increases. The purpose of this paper
Externí odkaz:
https://doaj.org/article/e09790df792741f3a6b3a64bcc53173f
Publikováno v:
Pribory i Metody Izmerenij, Vol 0, Iss 1, Pp 71-76 (2015)
The method was suggested and the laser control set-up was developed of the arrow bend and bend profile of the semiconductor wafers. It was established, that on the basis of determining the inclination angle of tangent at any point of the surface due
Externí odkaz:
https://doaj.org/article/bee105452f3e4794a1026c694b840e56
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 18, Iss 2, Pp 105-111 (2020)
The paper is purposed to establish the principles of the micro-structural changes of Pt-Si system during the rapid thermal treatment. The Pt films 43.7 nm thick were applied on the substrates of mono-crystal silicon KEF 0.5 with orientation (111) by