Zobrazeno 1 - 10
of 49
pro vyhledávání: '"V. A. Golyashov"'
Autor:
I. I. Klimovskikh, A. M. Shikin, M. M. Otrokov, A. Ernst, I. P. Rusinov, O. E. Tereshchenko, V. A. Golyashov, J. Sánchez-Barriga, A. Yu. Varykhalov, O. Rader, K. A. Kokh, E. V. Chulkov
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
Abstract One of the most promising platforms for spintronics and topological quantum computation is the two-dimensional electron gas (2DEG) with strong spin-orbit interaction and out-of-plane ferromagnetism. In proximity to an s-wave superconductor,
Externí odkaz:
https://doaj.org/article/abf4fcb9e3b74456950d5504b2fb071c
Autor:
E. R. Zakirov, V. G. Kesler, G. Y. Sidorov, V. A. Golyashov, O. E. Tereshchenko, D. V. Marin, M. V. Yakushev
Publikováno v:
Journal of Structural Chemistry. 64:519-527
Autor:
D. A. Glazkova, D. A. Estyunin, I. I. Klimovskikh, A. A. Rybkina, I. A. Golovchanskiy, O. E. Tereshchenko, K. A. Kokh, I. V. Shchetinin, V. A. Golyashov, A. M. Shikin
Publikováno v:
JETP Letters. 116:817-824
It is known that Mn(Bi1 –xSbx)2Te4 is an intrinsic magnetic topological insulator, where the Dirac point can be localized at the Fermi level by substituting Bi atoms for Sb atoms to implement the quantum anomalous Hall effect and other unique quant
Autor:
A. S. Tarasov, V. A. Golyashov, I. O. Akhundov, D. V. Ishchenko, A. S. Kozhukhov, K. A. Kokh, O. E. Tereshchenko
Publikováno v:
Russian Journal of Physical Chemistry B. 16:479-482
Autor:
D. A. Glazkova, D. A. Estyunin, I. I. Klimovskikh, T. P. Makarova, O. E. Tereshchenko, K. A. Kokh, V. A. Golyashov, A. V. Koroleva, A. M. Shikin
Publikováno v:
JETP Letters. 115:286-291
Intrinsic magnetic topological insulator MnBi2Te4 provides a promising platform to implement the quantum anomalous Hall effect at increased temperatures and other unique topological effects. However, to do this, the energy gap opening at the Dirac po
Publikováno v:
Optoelectronics, Instrumentation and Data Processing. 57:505-510
Autor:
D. V. Ishchenko, A. N. Akimov, I. O. Akhundov, V. A. Golyashov, A. E. Klimov, A. B. Loginov, B. A. Loginov, N. S. Pashchin, A. S. Tarasov, E. V. Fedosenko, V. N. Sherstyakova
Publikováno v:
Technical Physics. 66:878-882
Autor:
V. S. Rusetsky, V. A. Golyashov, S. V. Eremeev, D. A. Kustov, I. P. Rusinov, T. S. Shamirzaev, A. V. Mironov, A. Yu. Demin, O. E. Tereshchenko
New spin-dependent photoemission properties of alkali antimonide semiconductor cathodes are predicted based on the detected optical spin orientation effect and DFT band structure calculations. Using these results, the Na$_2$KSb/Cs$_3$Sb heterostructu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::59c51891e03bea5f2f193186b9a8c203
http://arxiv.org/abs/2205.03693
http://arxiv.org/abs/2205.03693
Publikováno v:
Автометрия. 57:70-76
Autor:
D. V. Gorshkov, I. O. Akhundov, V. A. Golyashov, V. S. Epov, G. Yu. Sidorov, D. V. Ishchenko, A. S. Tarasov, Igor G. Neizvestny, Oleg E. Tereshchenko, E. V. Matyushenko, A. N. Akimov, S. P. Suprun, Alexander E. Klimov
Publikováno v:
Semiconductors. 54:1325-1331
The characteristics of metal-insulator-semiconductor (MIS) structures based on insulating PbSnTe:In films with compositions in the vicinity of band inversion grown by molecular-beam epitaxy (MBE) are studied. It is shown that a number of features of