Zobrazeno 1 - 5
of 5
pro vyhledávání: '"V. A. Golovatskii"'
Autor:
V. I. Gutsul, V. A. Golovatskii
Publikováno v:
Russian Physics Journal. 49:1325-1333
In the effective mass approximation, the electron spectra in an elliptic quantum wire and elliptic semiconductor nanotube are investigated. An exact electron energy spectrum in the GaAs elliptic quantum wire and elliptic semiconductor nanotube with i
Autor:
R. B. Fartushinskii, M. Ya. Mikhal’ova, N. V. Tkach, O. M. Voitsekhivskaya, V. A. Golovatskii
Publikováno v:
Physics of the Solid State. 43:1370-1376
The mechanisms of the electron spectrum renormalization by confined (L) and interface (I) phonons in a spherical quantum dot (QD) embedded in a semiconducting sphere are studied for the specific case of the β-HgS/CdS nanosystem. It is shown that, in
Autor:
V. A. Golovatskii, N. V. Tkach
Publikováno v:
Physics of the Solid State. 43:365-372
The energies of the quasi-stationary states of electrons and holes in an open composite cylindrical quantum wire are calculated within the effective-mass approximation by means of the S-matrix theory. Specific calculation is carried out for the HgS/C
Publikováno v:
Russian Physics Journal. 41:1229-1237
The electron and hole spectra in the spherical potential well created by a double spherical heterostructure are investigated. Two mutually inverse nanoheterosystems are considered: CdS/HgS/H2O and HgS/CdS/H2O. The dependence of the energy levels on t
Autor:
N. V. Tkach, V. A. Golovatskii
Publikováno v:
Physics of the Solid State. 41:1911-1913
The electron scattering matrix for spherically symmetric states in a spherical β-HgS/β-CdS/β-HgS nanoheterosystem is calculated. The positions of the energy levels and the lifetimes of an electron in the corresponding states are found as functions