Zobrazeno 1 - 10
of 46
pro vyhledávání: '"V. A. Fortuna"'
Autor:
I. Gabanyi, G. B. Ferreira, R. C. Ferreira, P. B. Santos, M. P. Miranda, M. Andreolli, L. A. de Castro, E. Noda, D. Franco, A. C.V. Campos, E. M.C. Oliveira, M. Machado, D. Giannella- Neto, J. M. Granjeiro, S. M.S. Maria-Engler, M. L.C. Corrêa-Giannella, V. A. Fortuna, F. H. Lojudice, S. V. Sá, K. Krogh, L. Labriola, T. Genzini, I. L. Noronha, A. C. Goldberg, F. G. Eliaschewitz, M. C. Sogayar
Publikováno v:
Revista de Ciências Farmacêuticas Básica e Aplicada, Vol 26, Iss 1, Pp 1-8 (2009)
Diabetes mellitus is a widespread disease whose frequency increases constantly and is expected to reach alarming levels by the year 2025. Introduction of insulin therapy represented a major breakthrough; however, a very strict regimen is required to
Externí odkaz:
https://doaj.org/article/127804a8470a4697a22bc23d057ce9ff
Publikováno v:
Modern Physics Letters B. 25:995-1001
We present a study of the giant piezoresistance effect in p-type silicon using full-band Monte Carlo simulation based on 30-band k.p calculation. This effect has been demonstrated experimentally in Si nanowires by He and Yang. By including the well-k
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c805bcc608cf86cd4dcd6f6de74be79
https://doi.org/10.1142/s0217984911026711
https://doi.org/10.1142/s0217984911026711
Autor:
O. Flament, Arnaud Bournel, Melanie Raine, J.-E. Sauvestre, V. Aubry-Fortuna, Marc Gaillardin
Publikováno v:
IEEE Transactions on Nuclear Science. 57:1892-1899
The response of SOI transistors under heavy ion irradiation is analyzed using Geant4 and Synopsys Sentaurus device simulations. The ion mass and energy have a significant impact on the radial ionization profile of the ion deposited charge. For exampl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::748f4a08059ed49b024190079360981d
https://doi.org/10.1109/tns.2010.2048926
https://doi.org/10.1109/tns.2010.2048926
Autor:
C. Kampen, Alexander Burenkov, Arnaud Bournel, V. Aubry-Fortuna, Heiner Ryssel, Jurgen Lorenz
Publikováno v:
IEEE Transactions on Electron Devices. 55:3227-3235
This paper presents a quantum-mechanical modification of the conventional drift-diffusion model for simulation of quasi-ballistic carrier transport under high-field conditions. Thereby, the saturation velocity of charge carriers has been adjusted in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::baa577d34f429b136a97053f4049b893
https://doi.org/10.1109/ted.2008.2004474
https://doi.org/10.1109/ted.2008.2004474
Autor:
C. Chassat, Philippe Dollfus, Arnaud Bournel, Florian Monsef, V. Aubry-Fortuna, Jérôme Saint-Martin
Publikováno v:
Journal of Computational Electronics. 5:439-442
A new two-dimensional self-consistent Monte-Carlo simulator including the multi sub-band transport in a 2D electron gas is described and applied to an ultra-thin Double Gate MOSFET. This approach takes into account both out of equilibrium transport a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c1f304ad4f7971a6f01a1990f3b231b
https://doi.org/10.1007/s10825-006-0043-4
https://doi.org/10.1007/s10825-006-0043-4
Publikováno v:
Semiconductor Science and Technology. 21:422-428
Semi-classical Monte Carlo simulation is used to study the electrical performance of 18-nm-long n-MOSFETs including a strained Si channel. In particular, the impact of extrinsic series resistance on the drive current Ion is quantified: we show that t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bfa0082e78bed6629e0a066d45b813e
https://doi.org/10.1088/0268-1242/21/4/003
https://doi.org/10.1088/0268-1242/21/4/003
Publikováno v:
Journal of Physics and Chemistry of Solids. 63:1889-1900
X-ray diffraction experiments have been combined with Raman scattering and transmission electron microscopy data to analyze the result of rapid thermal annealing (RTA) applied to Zr films, 16 or 80 nm thick, sputtered on Si 1− x Ge x epilayers (0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c970250339e00c5517306a5c6a245822
https://doi.org/10.1016/s0022-3697(02)00175-0
https://doi.org/10.1016/s0022-3697(02)00175-0
Publikováno v:
Microelectronic Engineering. 64:435-441
In this work, we investigated W/p-type Si Schottky contacts with intentional inhomogeneities beneath the interface. These inhomogeneities are related to the presence of Ge-dots located just below the contact. The size and the density of the inhomogen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b92e84613373e3e04bbe29753eb9947b
https://doi.org/10.1016/s0167-9317(02)00818-3
https://doi.org/10.1016/s0167-9317(02)00818-3
Autor:
D. Bensahel, F. Fortuna, V. Aubry-Fortuna, O. Chaix-Pluchery, Y. Campidelli, Caroline Hernandez
Publikováno v:
Journal of Applied Physics. 91:5468-5473
Because of their good ohmic and rectifying properties, silicides are routinely used in Si technology. This approach has been recently extended to the novel devices produced using Si1−xGex alloys. Here, we study the Zr and Ti germanosilicides produc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e95a80a72cb709ee6a59f0b79626bf48
https://doi.org/10.1063/1.1462855
https://doi.org/10.1063/1.1462855
Autor:
L. Silvestri, J. Walczak, Antonio Martinez, Stephane Monfray, Pierpaolo Palestri, Gianluca Fiori, Craig Alexander, Aniello Esposito, Claudio Fiegna, Marco Braccioli, Asen Asenov, Enrico Sangiorgi, David Esseni, Jérôme Saint-Martin, Binjie Cheng, Giorgio Baccarani, Giuseppe Iannaccone, Susanna Reggiani, Andreas Schenk, Craig Riddet, A. Ghetti, Philippe Dollfus, V. Aubry-Fortuna, Luca Selmi, Bogdan Majkusiak, Arnaud Bournel
In this paper we mutually compare advanced modeling approaches for the determination of the drain current in nanoscale MOSFETs. Transport models range from Drift-Diffusion to direct solution of the Boltzmann Transport equation with the Monte-Carlo me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::33e04477803fb22bcbfdb14652507b75
https://hdl.handle.net/11380/1163320
https://hdl.handle.net/11380/1163320
