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pro vyhledávání: '"V. A. Filipyenya"'
Autor:
V. S. Prosolovich, V. B. Odzhayev, A. K. Panfilenko, Yu. N. Yankovsky, V. V. Buslyuk, V. A. Filipyenya, A. N. Petlitsky
Publikováno v:
Russian Microelectronics. 49:295-301
The physical parameters of the silicon noise-generator diodes manufactured on single-crystalline silicon substrates by planar technology are studied by the method of the measurement of the current–voltage characteristics (I–V curves) and capacity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dd5f334687de6f0f839501e38ab3281
https://doi.org/10.1134/s1063739720040034
https://doi.org/10.1134/s1063739720040034
