Výsledky vyhledávání - "V. A. Dobrego"

Investigation of shallow radiation defect levels produced in Ge by fast-neutron irradiation

Autor: V. P. Dobrego, V. D. Tkachev, O. P. Ermolaev

Publikováno v: Physica Status Solidi (a). 44:435-442

The electronic properties of Ge crystals irradiated with fast reactor neutrons are studied in the temperature range 1.7 to 300 K. Sb-, As- and Ga-doped Ge are used as original material. It is found that the activation energy of shallow radiation defe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0128ec306462682d0be278575bf08700
https://doi.org/10.1002/pssa.2210440204

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Electrical conductivity in a layer formed by low-temperature grinding in germanium

Autor: V. P. Dobrego, L. V. Govor

Publikováno v: Soviet Physics Journal. 31:54-57

Electrical-conductivity and Hall-effect measurements have been made for germanium surface layers damaged by grinding at room temperature and at low temperature (77 and 4.2 K). A comparison is made with cleaved surfaces. There are similarities and dif

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7f69f08113759f35b57c38e172f2d80e
https://doi.org/10.1007/bf00896687

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Conductivity in heavily doped and compensated epitaxial gallium arsenide layers

Autor: S K Evtimova, V P Dobrego

Publikováno v: Semiconductor Science and Technology. 1:161-166

The dependence of conductivity on electric field and on temperature in heavily doped and strongly compensated liquid-phase epitaxial GaAs layers is investigated. From the dependences on temperature (in low electric fields) and electric field (in stro

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0a718b7789514605103da95fbb007fd6
https://doi.org/10.1088/0268-1242/1/2/011

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The Influence of Local Potential Fluctuations on the Low-Temperature Radiative Recombination of Compensated Germanium

Autor: V. P. Dobrego, Issai Shlimak

Publikováno v: physica status solidi (b). 33:805-809

The luminescence of p-Ge doped both with Ga and As impurities in the region of “intermediate” concentrations (1016 to 1018 cm−3) has been investigated. Potential fluctuations due to random distribution of impurities in a crystal were shown to b

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f822a4d752c2c30f0e0acedf1f0d3e47
https://doi.org/10.1002/pssb.19690330234

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