Zobrazeno 1 - 10
of 31
pro vyhledávání: '"V. A. Chapnin"'
Autor:
Anastasiya V. Ryabova, V. P. Kalinushkin, M. I. Studenikin, E. S. Gulyamova, V V Tumorin, Pavel P Pashinin, N. N. Il’ichev, A. A. Gladilin, V. A. Chapnin, Oleg V. Uvarov, A. V. Sidorin, V. P. Danilov
Publikováno v:
Semiconductors. 54:67-72
The effect of the average power of femtosecond laser radiation on the average luminescence power of excitons and impurity–defect centers on the two-photon excitation of the electron system of a crystal is studied experimentally and theoretically us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e10faec966dd2d0eb9323af3977c450
https://doi.org/10.1134/s1063782620010091
https://doi.org/10.1134/s1063782620010091
Autor:
V. A. Chapnin, A. A. Gladilin, N. N. Il’ichev, E. M. Gavrishchuk, M. I. Studenikin, N A Timofeeva, D. V. Savin, V. B. Ikonnikov, S. A. Mironov, Stanislav Balabanov, V. P. Kalinushkin, Oleg V. Uvarov
Publikováno v:
Inorganic Materials. 55:423-431
The spatial distribution of impurity defect centers in Fe-doped chemical vapor deposited (CVD) ZnSe has been studied by two-photon confocal microscopy and scanning Fourier transform spectroscopy using an IR microscope. It has been shown that, as a re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::995d95119bc5aadd656bb82af519e0ce
https://doi.org/10.1134/s0020168519050017
https://doi.org/10.1134/s0020168519050017
Autor:
V V Tumorin, V. P. Kalinushkin, A. A. Gladilin, N. N. Il’ichev, V. A. Chapnin, M. I. Studenikin, G. G. Novikov, Oleg V. Uvarov
Publikováno v:
Semiconductors. 53:1-8
The effect of doping with iron (thermal diffusion from a surface) on the luminescence of zinc-selenide single crystals in the wavelength range 0.44–0.72 μm and on the spatial distribution of luminescence centers are studied. By means of two-photon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::beaca788cb5d615b57dec5495edc2330
https://doi.org/10.1134/s106378261901007x
https://doi.org/10.1134/s106378261901007x
Autor:
N. N. Il’ichev, V. A. Chapnin, S. A. Mironov, Vera V. Klechkovskaya, R. R. Rezvanov, M. V. Chukichev, Andrey S. Orekhov, Oleg V. Uvarov, V. P. Kalinushkin, Y. V. Klevkov, A. A. Gladilin
Publikováno v:
Crystallography Reports. 64:113-118
The effect of thermal treatment in zinc vapor on the stoichiometry, defect and impurity structure, and activator cathodoluminescence of ZnSe doped with iron by the thermal diffusion method has been studied. Using a variety of measurement methods, it
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ef8373b95ff84f7d981836ed6420f6b
https://doi.org/10.1134/s1063774518060159
https://doi.org/10.1134/s1063774518060159
Autor:
M. I. Studenikin, E. M. Gavrishchuk, V. P. Kalinushkin, N. N. Il’ichev, V. A. Chapnin, V. P. Danilov, N A Timofeeva, A. A. Gladilin, Anastasiya V. Ryabova, Oleg V. Uvarov, V. B. Ikonnikov
Publikováno v:
Inorganic Materials. 52:1108-1114
Edge and defective-impurity luminescence in polycrystalline CVD ZnSe has been studied in the range 0.46–0.73 μm by two-photon confocal microscopy. We have obtained luminescence intensity distribution maps for undoped, iron-doped, and chromium-dope
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::604c502421d337673910ea20d0945403
https://doi.org/10.1134/s0020168516110017
https://doi.org/10.1134/s0020168516110017
Autor:
Larisa V. Arapkina, S. S. Gizha, V. P. Kalinushkin, Mikhail S. Storozhevykh, V. A. Chapnin, V. M. Senkov, N. D. Beylin, Oleg V. Uvarov, I. V. Pirshin, K. V. Chizh, Vladimir A. Yuryev
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 9:734-737
The morphology of low-temperature (growth temperature 360 °C) multilayer Ge/Si heterostructures with Ge quantum dots was investigated by means of transmitting electron microscopy, scanning tunneling microscopy and X-ray optics. The possibility to de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf0041b8c52f394dfd91f77bb57d6e50
https://doi.org/10.1166/jno.2014.1673
https://doi.org/10.1166/jno.2014.1673
Autor:
S. A. Mironov, K. V. Chizh, Larisa V. Arapkina, Mikhail S. Storozhevykh, V. P. Dubkov, V. A. Yuryev, V. A. Chapnin
Publikováno v:
SPIE Proceedings.
This paper reports a study of two types of silicon based nanostructures prospective for applications in photonics. The first ones are Ge/Si(001) structures forming at room temperature and reconstructing after annealing at 600°C. Germanium, being dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::385ff8edaed5d2a8d98606d88483e9d2
https://doi.org/10.1117/12.2265882
https://doi.org/10.1117/12.2265882
Autor:
Elena S. Zhukova, A. S. Prokhorov, Vladimir A. Yuryev, Martin Dressel, Silvia Haindl, V. A. Chapnin, Boris Gorshunov, Larisa V. Arapkina, Kazumasa Iida, V. P. Kalinushkin, Igor E. Spektor, A. A. Boris, Elizaveta Motovilova, Oleg V. Uvarov, Mikhail S. Storozhevykh, V. S. Nozdrin, L. S. Kadyrov, Sina Zapf, K. V. Chizh
Publikováno v:
Radiophysics and Quantum Electronics. 56:620-627
We demonstrate the efficiency of using interference effects in multilayer structures for a quantitative determination of submillimeter (submm) electrodynamic characteristics of materials using quasioptical spectroscopy based on backward-wave oscillat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8005fa2f0eaf76c2b2e183b00473cf8e
https://doi.org/10.1007/s11141-014-9466-0
https://doi.org/10.1007/s11141-014-9466-0