Zobrazeno 1 - 3
of 3
pro vyhledávání: '"V. A. Chaplanov"'
Autor:
V. A. Chaplanov, S. S. Fanchenko, N. E. Belova, S. A. Nazarov, A. A. Nefedov, D. Yu. Schumilov, P. A. Aleksandrov
Publikováno v:
Surface Review and Letters. :295-298
We report the results of crystal truncation rod study for the following heterostructure: GaInAsP layer grown on Zn-doped InP substrate. Two series of experiments have been performed within 4.5 years. The profiles of coherent (200) polarizability and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b7e9e93c9346cd69d9cb7da1f3ba3c1
https://doi.org/10.1142/s0218625x98000542
https://doi.org/10.1142/s0218625x98000542
Publikováno v:
Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6f28234bfa204ca30eab79ed2310ca3
https://doi.org/10.7567/ssdm.1991.pc1-6
https://doi.org/10.7567/ssdm.1991.pc1-6
Publikováno v:
Acta Crystallographica Section A Foundations of Crystallography. 42:116-122
The angular dependence of the X-ray pure-diffraction intensity I(θ) has been measured in Ge and Si single crystals (surface covered with natural oxide films) by means of triple-crystal diffractometry. Measurements were extended to specimen-crystal a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bddf87f28a6489a5f4836bff55d5d0e3
https://doi.org/10.1107/s0108767386099762
https://doi.org/10.1107/s0108767386099762