Zobrazeno 1 - 10
of 147
pro vyhledávání: '"V. A. Chaldyshev"'
Autor:
A. A. Ivanov, V. V. Chaldyshev, E. E. Zavarin, A. V. Sakharov, W. V. Lundin, A. F. Tsatsulnikov
Publikováno v:
Semiconductors. 55:S49-S53
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62f9f067b22bc5b111515eeaaa1b218a
https://doi.org/10.1134/s1063782621090074
https://doi.org/10.1134/s1063782621090074
Autor:
V. V. Preobrazhenskii, A. A. Kondikov, Polina V. Gladskikh, V. V. Chaldyshev, Manfred Bayer, A. N. Kosarev, I. A. Akimov, B. R. Semyagin, I. A. Gladskikh, Mikhail A. Putyato, Nikita A. Toropov, Tigran A. Vartanyan
Publikováno v:
Optics and Spectroscopy. 126:492-496
Quantum dots of indium gallium arsenide buried in a thin layer of aluminum gallium arsenide were grown by means of molecular-beam epitaxy. The influence of silver nanoparticles grown on the surface of the semiconductor structure by vacuum thermal eva
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47079826c0fa93f4d5d31c18f95406a9
https://doi.org/10.1134/s0030400x19050151
https://doi.org/10.1134/s0030400x19050151
Autor:
A. A. Ivanov, V. V. Chaldyshev, V. I. Ushanov, E. E. Zavarin, A. V. Sakharov, W. V. Lundin, A. F. Tsatsulnikov
Publikováno v:
Applied Physics Letters. 121:041101
We study a disorder-induced transformation of the resonant optical reflection from a nearly periodic system of quasi-2D excitons in the InGaN quantum wells arranged as a resonant Bragg structure (RBS). We show that there is a critical deviation from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::034520efb05d49a5ab2588ea5de16034
https://doi.org/10.1063/5.0095417
https://doi.org/10.1063/5.0095417
Autor:
Z. Liu, V. V. Chaldyshev, Y. Chend, Evgeny V. Kundelev, Nikesh Maharjan, Mim Lal Nakarmi, A. P. Vasil’ev, N. M. Shakya, M. A. Yagovkina, Alexander N. Poddubny
Publikováno v:
Semiconductors. 52:447-451
Photoluminescence, optical reflectance and electro-reflectance spectroscopies were employed to study an AlGaAs/GaAs multiple-quantum-well based resonant Bragg structure, which was designed to match optical Bragg resonance with the exciton-polariton r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::862f9bd4bbf7a4baa5d3db49c95e87fb
https://doi.org/10.1134/s1063782618040097
https://doi.org/10.1134/s1063782618040097
Publikováno v:
Semiconductors. 50:1595-1599
The optical reflection from periodic structures based on a semiconductor AlGaAs matrix containing 2D arrays of plasmonic AsSb nanoinclusions is studied. The number of nanoinclusion layers is 12 or 24, and the nominal spatial periods are 100 or 110 nm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f2b3f90faaa9d3be94d3b9c1ad03a6a
https://doi.org/10.1134/s1063782616120253
https://doi.org/10.1134/s1063782616120253
Autor:
V. V. Lundin, V. V. Chaldyshev, A. S. Bolshakov, A. V. Sakharov, A. F. Tsatsul’nikov, E. E. Zavarin
Publikováno v:
Semiconductors. 50:1431-1434
The optical reflectance and transmittance spectra of a periodic InGaN/GaN semiconductor heterostructure with 60 quantum wells are studied at room temperature. The period of the structure was chosen such that, at some angles of incidence of light, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::569abd16b71cfb0046323d11210b7342
https://doi.org/10.1134/s1063782616110051
https://doi.org/10.1134/s1063782616110051
Publikováno v:
Semiconductors. 50:1499-1505
The photoluminescence of InAs semiconductor quantum dots overgrown by GaAs in the low-temperature mode (LT-GaAs) using various spacer layers or without them is studied. Spacer layers are thin GaAs or AlAs layers grown at temperatures normal for molec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c6ce0a8052731da0382fa12d024dab9
https://doi.org/10.1134/s1063782616110154
https://doi.org/10.1134/s1063782616110154
Autor:
N. M. Lebedeva, V. I. Ushanov, V. N. Nevedomsky, Mikhail A. Putyato, B. R. Semyagin, N. A. Bert, N. D. Il’inskaya, V. V. Chaldyshev, V. V. Preobrazhenskii
Publikováno v:
Semiconductors. 49:1587-1591
Optical extinction in a metal–semiconductor metamaterial based on a AlGaAs matrix, which contains random arrays of AsSb plasmon nanoinclusions, is studied. The metamaterial is grown by molecular beam epitaxy at a low temperature. A system of nanoin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69e5d7e8cdac63d07baa3aa40f96f746
https://doi.org/10.1134/s1063782615120234
https://doi.org/10.1134/s1063782615120234
Autor:
V. N. Nevedomskiy, V. V. Chaldyshev, V. V. Preobrazhernskiy, Mikhail A. Putyato, N. A. Bert, B. R. Semyagin
Publikováno v:
Semiconductors. 49:1661-1664
A single molecular-beam epitaxy process is used to produce GaAs-based heterostructures containing two-dimensional arrays of InAs semiconductor quantum dots and AsSb metal quantum dots. The twodimensional array of AsSb metal quantum dots is formed by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4961549cd7ccf9eddbc1349ca4ae838b
https://doi.org/10.1134/s106378261512012x
https://doi.org/10.1134/s106378261512012x
Autor:
V. V. Chaldyshev, A. N. Kosarev
Publikováno v:
Applied Physics Letters. 117:202103
Localization of carriers in a self-organized quantum dot is a problem of quantum mechanics to be solved with the localizing potential for electrons and holes determined by the geometry, chemical composition, and built-in mechanical stress–strain fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df35683b48fb1bf3db029a34cfefd0d5
https://doi.org/10.1063/5.0032110
https://doi.org/10.1063/5.0032110