Výsledky vyhledávání - "V. A. Bazakutsa"

Optical properties and photoinduced effects in Ge-As-Se films and two-layer systems on their basis

Autor: Ye. T. Lemeshevskaya, Violetta I. Belozertseva, S. D. Gapochenko, V. V. Mussil, V. A. Bazakutsa

Publikováno v: SPIE Proceedings.

The optical transmission spectra of the thin GeAs1,Se1oo (O x films and of two-layer systemson their basis have been studied. Changes of optical parameters (refractive index of films and photosensitivity, contrastcoefficient oftwo-layer systems) indu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::127b59da60967bee5164f6908a7c1ab7
https://doi.org/10.1117/12.497268

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Certain features of the thickness and temperature dependences of the electrical conductivity of amorphous LiBiTe2 films

Autor: V. A. Bazakutsa, N. I. Gnidash, V. I. Perekrestov

Publikováno v: Soviet Physics Journal. 28:697-700

Amorphous films of ternary semiconducting compound LiBeTe2 are obtained by the method of discrete atomization. The electrophysical properties of the films are studied in a broad temperature range. The thickness dependence of the conductivity is expla

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0cedb592f2260faafa060942ad3114d0
https://doi.org/10.1007/bf00895516

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Lattice thermal conductivity and chemical bond in the hypovalent two-cation semiconductors A1SbC 2 6 and TlB5C 2 6

Autor: V. A. Bazakutsa, L. M. Mokhir, V. N. Ustimenko, M. P. Vasil'eva

Publikováno v: Journal of Engineering Physics. 37:1191-1195

The relation between the lattice thermal conductivity of A1SbC 2 6 (A1=Li, Na, K, Rb, Cs; C6=S, Se) and TlB5C 2 6 (B5=As, Sb, Bi; C 2 6 =S, Se, Te) and the nature of the chemical bond is investigated. It is shown that the relative radii of the atoms

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8dea7cecc02fcace2657cf063f120a43
https://doi.org/10.1007/bf00860993

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Thermal conductivity of triple semiconductors of A1SbC 2 6 type as a function of chemical composition and structure

Autor: M. P. Vasil'eva, V. A. Bazakutsa

Publikováno v: Journal of Engineering Physics. 34:137-140

This paper studies the laws for variation of the thermal conductivity of incompletely valent chalcogenide compounds A1SbC 2 6 (A1-Li, Na, K, Rb, Cs; C6-S, Se) as a function of their chemical composition and structure.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::243339ccf80b8e6a8c0ef5d7a76bc4ee
https://doi.org/10.1007/bf00861228

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Vapour transport of CdCr2S4 and HgCr2Se4: Chemical equilibrium and crystal growth

Autor: S. I. Radautsan, K. G. Nikiforov, V. K. Belyaev, V. A. Bazakutsa

Publikováno v: Crystal Research and Technology. 24:371-377

Theoretical and experimental studies of the CdCr2S4(HgCr2Se4): CrCl3 systems have been performed for the crystal composition control in the chemical transport growth. The balance partial pressures of the components have been calculated in a wide temp

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f7160d4e9a8190fbd50795ae2867e29d
https://doi.org/10.1002/crat.2170240407

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The structure and some electro-physical properties of TlSbS2 films

Autor: V. A. Bazakutsa, L. P. Zozulya, L. G. Voinova

Publikováno v: Soviet Physics Journal. 16:1218-1221

The 1μm thick films of TlSbS2 were obtained by thermal evaporation in vacuum. It has been shown that, depending on the conditions of preparation and annealing, amorphous or polycrystalline and grain-oriented layers of TlSbS2 can be obtained. The ele

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6f07dbb405542ec2a8639e6461777efb
https://doi.org/10.1007/bf00890881

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Nature of photoconduction in films of amorphous silicon activated with mercury

Autor: G. D. Mokhov, V. A. Bazakutsa, L. A. Golovash

Publikováno v: Soviet Physics Journal. 10:1-5

The results of an investigation into the photoconductivity of amorphous silicon films at low excitation levels are given. The number of peculiarities are explained by nonuniformity of the semiconducting layer and also by the presence of a photodiode

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d62e6ddfc71b24fdf38e6ddd1a1f6165
https://doi.org/10.1007/bf00819781

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