Zobrazeno 1 - 10
of 56
pro vyhledávání: '"V. A. Bazakutsa"'
Autor:
Ye. T. Lemeshevskaya, Violetta I. Belozertseva, S. D. Gapochenko, V. V. Mussil, V. A. Bazakutsa
Publikováno v:
SPIE Proceedings.
The optical transmission spectra of the thin GeAs1,Se1oo (O x films and of two-layer systemson their basis have been studied. Changes of optical parameters (refractive index of films and photosensitivity, contrastcoefficient oftwo-layer systems) indu
Publikováno v:
Soviet Physics Journal. 28:697-700
Amorphous films of ternary semiconducting compound LiBeTe2 are obtained by the method of discrete atomization. The electrophysical properties of the films are studied in a broad temperature range. The thickness dependence of the conductivity is expla
Publikováno v:
Journal of Engineering Physics. 37:1191-1195
The relation between the lattice thermal conductivity of A1SbC 2 6 (A1=Li, Na, K, Rb, Cs; C6=S, Se) and TlB5C 2 6 (B5=As, Sb, Bi; C 2 6 =S, Se, Te) and the nature of the chemical bond is investigated. It is shown that the relative radii of the atoms
Autor:
M. P. Vasil'eva, V. A. Bazakutsa
Publikováno v:
Journal of Engineering Physics. 34:137-140
This paper studies the laws for variation of the thermal conductivity of incompletely valent chalcogenide compounds A1SbC 2 6 (A1-Li, Na, K, Rb, Cs; C6-S, Se) as a function of their chemical composition and structure.
Publikováno v:
Crystal Research and Technology. 24:371-377
Theoretical and experimental studies of the CdCr2S4(HgCr2Se4): CrCl3 systems have been performed for the crystal composition control in the chemical transport growth. The balance partial pressures of the components have been calculated in a wide temp
Publikováno v:
Soviet Physics Journal. 16:1218-1221
The 1μm thick films of TlSbS2 were obtained by thermal evaporation in vacuum. It has been shown that, depending on the conditions of preparation and annealing, amorphous or polycrystalline and grain-oriented layers of TlSbS2 can be obtained. The ele
Publikováno v:
Soviet Physics Journal. 10:1-5
The results of an investigation into the photoconductivity of amorphous silicon films at low excitation levels are given. The number of peculiarities are explained by nonuniformity of the semiconducting layer and also by the presence of a photodiode
Publikováno v:
Soviet Physics Journal. 12:537-539
Publikováno v:
Soviet Physics Journal. 15:1644-1646
Publikováno v:
Soviet Physics Journal. 12:825-827