Výsledky vyhledávání

Depth carrier profiling in silicon carbide

Autor: V Raineri, L Calcagno

Publikováno v: Current opinion in solid state & materials science 6 (2002): 47–54.
info:cnr-pdr/source/autori:Calcagno L., Raineri V./titolo:Depth carrier profiling in silicon carbide/doi:/rivista:Current opinion in solid state & materials science/anno:2002/pagina_da:47/pagina_a:54/intervallo_pagine:47–54/volume:6

The measurement of majority carrier concentration profiles in silicon carbide is critically discussed considering the most promising methods. Three different techniques are reviewed in detail: (1) capacitance–voltage measurements, (2) scanning capa

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c47c3a57a3b6d78ef9e02b473796e61a
https://doi.org/10.1016/s1359-0286(02)00003-7

Zobrazit plný text záznamu

Effect of stress on accumulation of oxygen in silicon implanted with helium and hydrogen

Autor: W. Wierzchowski, Irina V. Antonova, Andrzej Misiuk, Adam Barcz, V. Raineri, Jadwiga Bak-Misiuk, Jacek Ratajczak, K. Wieteska

Publikováno v: Physica B: Condensed Matter. :317-320

Pronounced oxygen segregation in helium-implanted Czochralski silicon, Cz-Si : He, treated at 1000–1400 K under atmospheric or enhanced, up to 1.2×10 9 Pa, hydrostatic pressure, HP, is observed. Annealing of hydrogen-implanted Cz-Si : H at 720–9

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::33758da6806cf06348df7bdbb0fa21af
https://doi.org/10.1016/s0921-4526(01)00881-x

Zobrazit plný text záznamu

Effect of uniform stress on silicon implanted with helium, hydrogen and oxygen

Autor: J. Bak-Misiuk, H.B. Surma, I.V Antonova, J. Katcki, A. Misiuk, J. Ratajczak, E. P. Neustroev, A. Bachrouri, Albert Romano-Rodriguez, J. Adamczewska, V. Raineri

Publikováno v: Computational Materials Science. 21:515-525

The effect of annealing at up to 1550 K under argon pressure up to 1.5 GPa (high temperature–high pressure (HT–HP) treatment) on silicon implanted with helium, hydrogen or oxygen (Si:He, Si:H or Si:O) was investigated by X-ray, secondary ions mas

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cbb604da311dbee53001a5a5c5a3b67f
https://doi.org/10.1016/s0927-0256(01)00200-2

Zobrazit plný text záznamu

Infrared spectroscopy and transmission electron microscopy of polycrystalline silicon carbide

Autor: V. Raineri, A.M. Makthari, Lucia Calcagno, M. Dkaki

Publikováno v: Materials Science in Semiconductor Processing. 4:201-204

The polycrystalline structure of silicon carbide was investigated by infrared spectroscopy and transmission electron microscopy (TEM). The films were obtained by annealing in the temperature range 950–1250°C of amorphous silicon carbide films depo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3830ed01beab97d60f3f1be9ff5a18a9
https://doi.org/10.1016/s1369-8001(00)00113-x

Zobrazit plný text záznamu

Gettering efficiencies of polysilicon-, stacking fault- and He-implanted backsides for Cu and Ni

Autor: V Raineri, L. Fabry, J. Hage, Robert Hoelzl, K.-J. Range

Publikováno v: Materials Science and Engineering: B. 73:95-98

We have studied the gettering efficiencies of copper and nickel in silicon wafers with polysilicon-, stacking fault- and He-implanted backsides. The gettering test begins with a controlled spin-on spiking in the range of low 10 12 atoms cm −2 , fol

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::db332545afce961a1105da0f46fcfb4c
https://doi.org/10.1016/s0921-5107(99)00442-0

Zobrazit plný text záznamu

Damage engineering and proximity gettering of metals studied by electrical measurements on Pt-contaminated diodes

Autor: A Cacciato, V Raineri

Publikováno v: Semiconductor Science and Technology. 13:941-949

We studied the characteristics of junction leakage currents of diodes having buried damage layers formed by high-energy B implantation. The efficiency of the buried layers was evaluated with respect to both microdefect dissolution and gettering of me

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::51b39c58625cf5a5b68cd3dfab7c99df
https://doi.org/10.1088/0268-1242/13/8/020

Zobrazit plný text záznamu

About the eastern limit of distribution ofPhlebotomus ariasi(Diptera: Psychodidae)

Autor: L. Frusteri, G. Pontuale, C. Khoury, Michele Maroli, V. Raineri

Publikováno v: Parasite. 4:377-381

Cette note fait part des resultats des enquetes entomologiques menees en 1995 dans les provinces de la region de Ligurie (Italie) pendant la periode d'activite des phlebotomes Un total de 2 216 phlebotomes a ete recolte dans quatre provinces en l'esp

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::295c4d770c537cca47a2fad280edec39
https://doi.org/10.1051/parasite/1997044377

Zobrazit plný text záznamu

Voids in silicon as sink for interstitials

Autor: S.U. Campisano, V. Raineri

Publikováno v: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 120:56-59

Transmission electron microscopy has been extensively used to quantify the reduction of extended defects formation in B- (up to 2 × 1015/cm2 at 80 keV) implanted regions of silicon crystals annealed at high temperatures. The suppression of dislocati

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8db9bb4b864aaa3264fe2a3b12e1d906
https://doi.org/10.1016/s0168-583x(96)00478-8

Zobrazit plný text záznamu

Near-field photocurrent measurements on boron-implanted silicon

Autor: C. Spinella, P. Chiaradia, V. Marocchi, P. Perfetti, A. Cricenti, V. Raineri

Publikováno v: Journal of applied physics 91 (2002): 3937–3939. doi:10.1063/1.1446654
info:cnr-pdr/source/autori:Marocchi V., Cricenti A., Perfetti P., Chiaradia P., Raineri V., Spinella C./titolo:Near-field photocurrent measurements on boron-implanted silicon/doi:10.1063%2F1.1446654/rivista:Journal of applied physics/anno:2002/pagina_da:3937/pagina_a:3939/intervallo_pagine:3937–3939/volume:91

We report near-field photocurrent (NPC) measurements performed on three boron-implanted silicon samples characterized by different implantation doses. The images were acquired at lambda=1330 nm corresponding to a photon energy of 0.93 eV which is sma

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e89442f2dd5515c1c1587f6e8dc26bca
https://doi.org/10.1063/1.1446654

Zobrazit plný text záznamu

Carrier transport in annealed inhomogeneous Au/Ni/p-GaN interfaces

Autor: G.Greco 1, R. Lo Nigro 1, P. Prystawko 2, M. Leszczy?ski 2, V. Raineri 1, F. Roccaforte 1

Publikováno v: 35th European Workshop on Compound Semiconductor Devices and Integrated Circuits-WOCSDICE2011, pp. 125–126, Catania (Italy), 29 May-1 June, 2011
info:cnr-pdr/source/autori:G.Greco 1, R. Lo Nigro 1, P. Prystawko 2, M. Leszczy?ski 2, V. Raineri 1, F. Roccaforte 1/congresso_nome:35th European Workshop on Compound Semiconductor Devices and Integrated Circuits-WOCSDICE2011/congresso_luogo:Catania (Italy)/congresso_data:29 May-1 June, 2011/anno:2011/pagina_da:125/pagina_a:126/intervallo_pagine:125–126

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::0eff30e745746ac44ba4813bdb860fdf
http://www.cnr.it/prodotto/i/300148

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání