Zobrazeno 1 - 3
of 3
pro vyhledávání: '"V. А. Pilipenko"'
Autor:
V. А. Pilipenko, V. A. Saladukha, V. A. Filipenya, R. I. Vorobey, O. K. Gusev, A. L. Zharin, K. V. Pantsialeyeu, A. I. Svistun, A. K. Tyavlovsky, K. L. Tyavlovsky
Publikováno v:
Pribory i Metody Izmerenij, Vol 8, Iss 4, Pp 344-356 (2017)
Introduction of submicron design standards into microelectronic industry and a decrease of the gate dielectric thickness raise the importance of the analysis of microinhomogeneities in the silicon-silicon dioxide system. However, there is very little
Externí odkaz:
https://doaj.org/article/7ce66eec3f1e4c2aaa1698b4a81a3d81
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 18, Iss 2, Pp 105-111 (2020)
The paper is purposed to establish the principles of the micro-structural changes of Pt-Si system during the rapid thermal treatment. The Pt films 43.7 nm thick were applied on the substrates of mono-crystal silicon KEF 0.5 with orientation (111) by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a3679ac6f3cb6a2c0d4387a84431c8c5
https://doklady.bsuir.by/jour/article/view/2647
https://doklady.bsuir.by/jour/article/view/2647
Autor:
R. I. Vorobey, A. I. Svistun, K. L. Tyavlovsky, Anatoly Zharin, O. K. Gusev, V. А. Pilipenko, V. A. Saladukha, K. V. Pantsialeyeu, V. A. Filipenya, A. K. Tyavlovsky
Publikováno v:
Pribory i Metody Izmerenij, Vol 8, Iss 4, Pp 344-356 (2017)
Introduction of submicron design standards into microelectronic industry and a decrease of the gate dielectric thickness raise the importance of the analysis of microinhomogeneities in the silicon-silicon dioxide system. However, there is very little
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::87a12f5f3c5fc86f8ca3ab8f3fc2e44d
https://pimi.bntu.by/jour/article/view/344
https://pimi.bntu.by/jour/article/view/344