Zobrazeno 1 - 10
of 131
pro vyhledávání: '"V Zelezny"'
Autor:
Petr Kuzel, Jan Dec, Jan Petzelt, Tetyana Ostapchuk, Christelle Kadlec, V Zelezny, Jan Kroupa, Jiri Hlinka
Publikováno v:
Phase Transitions. 87:1129-1137
Polarized terahertz transmittance and infrared reflectivity measurements were performed on selected lead zirconate crystals at T = 10 K. The fit of the spectra enabled us to obtain all three principal components of its anisotropic dielectric function
Publikováno v:
Surface and Coatings Technology. 240:76-85
Amorphous SiCxNy films (of 2.2–2.7 μm) were deposited on Si(111) substrates by reactive DC magnetron sputtering. The SiC target with small excess of carbon was sputtered at various N2/Ar gas flow ratios (0–0.48). The as-deposited films were addi
Akademický článek
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Akademický článek
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Publikováno v:
Thin Solid Films. 516:7758-7763
The anisotropy of the dielectric function of c -axis oriented MgB 2 thin films has been revealed by a combined study of normal-incident reflectance and spectroscopic ellipsometry. The application of this procedure enabled us to determine the complete
Publikováno v:
Journal of the European Ceramic Society. 24:1545-1549
Broad-band dielectric responses (10 2 -10 14 Hz) of Sr 1-1.5x Bi x TiO 3 (x=0.0067÷0.133) ceramics and K 1-x Li x TaO 3 (x=0.050÷14) single crystals are analysed and compared. The common features are emphasized: softening of the polar phonon is sup
Publikováno v:
Physica C: Superconductivity. 362:86-91
Anomalous spectral behavior of the c-axis far-infrared conductivity at low-temperatures has been investigated in high-Tc superconducting cuprates (HTSC). As the temperature is lowered, a broad bump grows around 450 cm−1 and the in-plane oxygen phon
Autor:
Jan Petzelt, Boris Gorshunov, Viktor Bovtun, I. P. Bykov, Martin Dressel, Petr Kuzel, V. Porokhonskyy, Stanislav Kamba, Maya D. Glinchuk, Alexej Pashkin, Tetyana Ostapchuk, V Zelezny
Publikováno v:
Journal of Physics: Condensed Matter. 13:2677-2689
Infrared reflectivity spectra of lead zirconate ceramics were measured in the frequency region of 20-3000 cm-1 and temperature range from 10 to 900 K. The data, extended to lower frequencies by coherent source submillimetre, time-domain terahertz tra
Publikováno v:
Journal of Crystal Growth. :1057-1060
Molecular beam epitaxy has been used to grow epitaxial layers of different CuIn x Se y phases on (111) oriented silicon substrates. Rutherford backscattering channeling yields of 7-11% and X-ray rocking curve linewidths of 900 arcsec measured for 600
Publikováno v:
Journal of Low Temperature Physics. 117:1019-1023
The optical spectra of some high-Tc cuprates show anomalous bump around 450 cm−1and dramatic phonon changes for E parallel to c axis, which grows at low temperatures. This phenomenon has been observed in Yba2Cu3O6.6, YBa2Cu4O8and Pb2Sr2RCu3O8, but