Zobrazeno 1 - 10
of 50
pro vyhledávání: '"V W Rampton"'
Autor:
V. W. Rampton, J.R. Middleton, M.R. Gates, J.S. Chauhan, Mohamed Henini, R.B. Dunford, Christopher J. Mellor
Publikováno v:
Physica B: Condensed Matter. :219-222
For a double layer 2D hole system, a maximum in velocity shift at ν =1 was only observed at frequencies above 560 MHz. The background velocity shift in the region where the Fermi level lies in the extended states region was observed to increase with
Autor:
M.R. Gates, Mohamed Henini, J.R. Middleton, R.B. Dunford, Christopher J. Mellor, J.S. Chauhan, V. W. Rampton
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 12:462-465
The surface acoustic wave velocity shift and acoustoelectric effect have been studied in a double layer GaAs/AlGaAs 2D hole system. The transverse acoustoelectric field exhibited bipolar peaks centred at integer filling factor, in qualitative agreeme
Autor:
M.R. Gates, Mohamed Henini, J.R. Middleton, Christopher J. Mellor, R.B. Dunford, J.S. Chauhan, V. W. Rampton
Publikováno v:
Physica B: Condensed Matter. 298:70-73
The temperature and frequency dependence of the surface acoustic wave (SAW) velocity shift has been studied in a double layer 2DHS for 0.34–4.2 K and 112–560 MHz. The measured velocity shift has been compared to the velocity shift calculated from
Autor:
Mohamed Henini, B Bracher, Christopher J. Mellor, V. W. Rampton, I Kennedy, C. T. Foxon, J. J. Harris
Publikováno v:
Semiconductor Science and Technology. 16:136-139
The surface acoustic wave attenuation and dispersion have been measured as a function of magnetic field for both a two-dimensional electron system and a two-dimensional hole system at frequencies between 100 and 1100 MHz. The experiments were made at
Publikováno v:
Physica B: Condensed Matter. :94-97
Two versions of the acoustic deep-level transient spectroscopy (A-DLTS) technique based on the acoustoelectric effect resulting from the interaction between an acoustic wave and heterostructure interfaces have been used to study deep centres in GaAs/
Autor:
Christopher J. Mellor, Mohamed Henini, V. W. Rampton, Peter Coleridge, Z. R. Wasilewski, B Bracher, I Kennedy
Publikováno v:
Scopus-Elsevier
The integer and fractional quantum Hall effects have been investigated using the acoustoelectric effect in both two-dimensional hole and electron systems fabricated by MBE on GaAs. Measurements have been made of the longitudinal and transverse acoust
Publikováno v:
Surface Science. 373:379-392
The acoustoelectric effect induced by the coupling between a surface acoustic wave and a two-dimensional electron system is investigated on GaAs AlGaAs heterojunctions at 4.2 K in the quantum Hall effect regime. This work was performed to study two-d
Autor:
A G Kozorezov, V W Rampton
Publikováno v:
Semiconductor Science and Technology. 10:1089-1098
A theoretical study has been made of the interaction of longitudinal coherent bulk acoustic waves at 9.4 GHz with a 2DEG at a GaAs/AlGAs heterojunction in a strong magnetic field. A generalized transfer matrix formalism was used to consider such a dy
Publikováno v:
Physica Status Solidi (a). 133:363-369
The acoustoelectric effect resulting from the interaction between a longitudinal acoustic wave at 13 MHz and the two-dimensional electron gas (2-DEG) in a GaAs/AlGaAs heterostructure is described. Quantum oscillations in the acoustoelectric response
Autor:
O.H. Hughes, Mohamed Henini, P. J. A. Carter, A. G. Kozorezov, K. B. McEnaney, V. W. Rampton, C. D. W. Wilkinson
Publikováno v:
Semiconductor Science and Technology. 7:641-647
The surface acoustic wave (SAW) transmission has been measured at 4.2 K, as a function of magnetic field up to 5 T, for a GaAs wafer on which a heterojunction has been grown by MBE. Frequencies up to 1920 MHz were generated by interdigital SAW transd