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pro vyhledávání: '"V Vasco Verlaan"'
Autor:
V Vasco Verlaan, Wmm Erwin Kessels, G Gijs Dingemans, van de Mcm Richard Sanden, van den Lrjg Elzen
Publikováno v:
Physica Status Solidi C: Conferences, 7(3-4), 976-979. Wiley-VCH Verlag
A systematic study on the composition and bonding structure of plasma-assisted ALD Al2O3 films deposited at substrate temperatures between 25 and 400 °C is presented. The composition of the films is determined with Rutherford back scattering (RBS) a
Autor:
M.C.M. van de Sanden, G Gijs Dingemans, Jjh Joost Gielis, Bram Hoex, N.M. Terlinden, V Vasco Verlaan, Wilhelmus M. M. Kessels
Publikováno v:
2009 34th IEEE Photovoltaic Specialists Conference (PVSC).
Recently, we have demonstrated that ultrathin (≪30 nm) films of Al 2 O 3 synthesized by (plasma-assisted) atomic layer deposition (ALD) provide an excellent level of surface passivation of c-Si which may find important applications in (high-efficie