Zobrazeno 1 - 10
of 39
pro vyhledávání: '"V V Shorokhov"'
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 87:59-65
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b45cdb01a95b3e559cb032e12823c78
https://doi.org/10.3103/s1062873822700149
https://doi.org/10.3103/s1062873822700149
Autor:
A. E. Vartanova, A. Yu. Plodukhin, M. A. Boichenko, V. V. Shorokhov, S. S. Zhokhov, I. V. Trushkov, O. A. Ivanova
Publikováno v:
Russian Chemical Bulletin. 71:2431-2440
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69a2febe404c3aa7e0df21706de41ef4
https://doi.org/10.1007/s11172-022-3671-3
https://doi.org/10.1007/s11172-022-3671-3
Publikováno v:
Atomic Energy. 131:303-306
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32069363aaacf70e38d749c9c44aa424
https://doi.org/10.1007/s10512-022-00883-3
https://doi.org/10.1007/s10512-022-00883-3
Autor:
Sarkis A. Dagesyan, I. V. Sapkov, O.V. Snigirev, Artem S. Trifonov, V. V. Shorokhov, I. V. Bozhev, Vladimir A. Krupenin, Denis E. Presnov, I.G. Prokhorova, Andrey A. Shemukhin
Publikováno v:
Moscow University Physics Bulletin. 74:165-170
Here we present CMOS compatible fabrication methods and the results of an experimental study of single-atom single-electron transistors made from silicon on insulator and based on various dopant atoms. Transistors with channels doped with arsenic (As
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b516bf14b8ecc0ab65a9ba26a5b39f91
https://doi.org/10.3103/s0027134919020164
https://doi.org/10.3103/s0027134919020164
Autor:
I. V. Yudin, Nikolai V. Zyk, Viktor A. Tafeenko, Alexander D. Khudyakov, V. V. Shorokhov, A. V. Rzheutsky, E. S. Barskaya, Elena K. Beloglazkina
Publikováno v:
Russian Chemical Bulletin. 68:638-643
An approach for the synthesis of new organic ligands combining in their structure pyridine, benzothiazole, and polyethylene glycol fragments was developed, proceeding from 6-hydroxy-2-(pyridin-2-yl)benzothiazole and mono- or ditosyl-substituted polye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c46bf05251c7d7a483ed1e70d393c2bc
https://doi.org/10.1007/s11172-019-2468-5
https://doi.org/10.1007/s11172-019-2468-5
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 83:6-11
The transport characteristics of single-atom transistors with charge centers based on Sc, Cr, Ru, Rh, and Pt atoms are studied. Single-particle electron spectra of molecules of the coordination compound of these atoms with an aurophilic terpyridine d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aec90f57787f28914270f8dcdd7b2538
https://doi.org/10.3103/s1062873819010209
https://doi.org/10.3103/s1062873819010209
Publikováno v:
Moscow University Physics Bulletin. 73:659-668
A quasi-one-dimensional model was developed for the transport of electrons in the scanning tunneling microscope needle–CdTe/CdSe tetrapod-shaped nanocrystal system. This model was used as a basis to study the effect of the concentration of charge c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab4f1567357079f265c186316d61298b
https://doi.org/10.3103/s0027134918060267
https://doi.org/10.3103/s0027134918060267
Publikováno v:
Moscow University Physics Bulletin. 73:493-500
The method of parameterization of the electron energy spectrum of molecules is used to theoretically study the specific features of the energy spectrum of a family of molecules of the monometallic coordination compound of terpyridine with Rh, Ru, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1e28c14eff3d64de8a6b593c96b9d41
https://doi.org/10.3103/s0027134918050144
https://doi.org/10.3103/s0027134918050144
Autor:
E. S. Soldatov, V. V. Shorokhov, Sarkis A. Dagesyan, Vladimir A. Krupenin, Artem S. Trifonov, Denis E. Presnov, O.V. Snigirev
Publikováno v:
Moscow University Physics Bulletin. 72:474-479
We present the results of an experimental study of electron transport through individual phosphorus dopants implanted into a silicon crystal. We developed an original technique for single-electron transistor fabrication from silicon-on-insulator mate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::735c60983ab018cdd4ddcd996ff28e19
https://doi.org/10.3103/s0027134917050058
https://doi.org/10.3103/s0027134917050058
Autor:
V. V. Shorokhov
Publikováno v:
Moscow University Physics Bulletin. 72:279-286
Solitary dopants in semiconductors and dielectrics that possess stable electron structures and interesting physical properties may be used as building blocks of quantum computers and sensor systems that operate based on new physical principles. This
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c01f0f15043d8a7706e98295f782cdce
https://doi.org/10.3103/s0027134917030110
https://doi.org/10.3103/s0027134917030110