Zobrazeno 1 - 10
of 23
pro vyhledávání: '"V V Shashkin"'
Autor:
V. V. Shashkin, M. A. Tolstykh
Publikováno v:
Geoscientific Model Development, Vol 7, Iss 1, Pp 407-417 (2014)
The semi-Lagrangian absolute vorticity (SL-AV) atmospheric model is the global semi-Lagrangian hydrostatic model used for operational medium-range and seasonal forecasts at the Hydrometeorological Centre of Russia. The distinct feature of the SL-AV d
Externí odkaz:
https://doaj.org/article/51ab85b2b65c4e868ba5163b912cd8e6
Autor:
P. H. Lauritzen, P. A. Ullrich, C. Jablonowski, P. A. Bosler, D. Calhoun, A. J. Conley, T. Enomoto, L. Dong, S. Dubey, O. Guba, A. B. Hansen, E. Kaas, J. Kent, J.-F. Lamarque, M. J. Prather, D. Reinert, V. V. Shashkin, W. C. Skamarock, B. Sørensen, M. A. Taylor, M. A. Tolstykh
Publikováno v:
Geoscientific Model Development, Vol 7, Iss 1, Pp 105-145 (2014)
Recently, a standard test case suite for 2-D linear transport on the sphere was proposed to assess important aspects of accuracy in geophysical fluid dynamics with a "minimal" set of idealized model configurations/runs/diagnostics. Here we present re
Externí odkaz:
https://doaj.org/article/cd0d086b309b48768ebdf879fe46a131
Autor:
V V Shashkin, G S Goyman
Publikováno v:
Journal of Physics: Conference Series. 1740:012073
Next generation weather prediction atmospheric models will have horizontal resolution of about 3-5 km. The problem dimension will be 1010. One will need to use efficiently 104-105 computational cores to make a practical operational forecast. This lea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc64c0483747a5089f2eddf72b05f862
https://doi.org/10.1088/1742-6596/1740/1/012073
https://doi.org/10.1088/1742-6596/1740/1/012073
Publikováno v:
Izvestiya, Atmospheric and Oceanic Physics. 46:133-143
Simulation of the atmospheric circulation on the seasonal scale with the new version of the global semi-Lagrangian model is considered. The new version includes land surface processes parameterization taking into account influence of the vegetation a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0da9999ba80ea4329c8263dd9417f16
https://doi.org/10.1134/s0001433810020015
https://doi.org/10.1134/s0001433810020015
Autor:
V. A. Fateev, A. P. Savchenko, I. V. Marchishin, Dmitrii G. Esaev, I. V. Budkin, V. V. Shashkin, A. A. Padalitsa, Victor N. Ovsyuk, A V Sukharev, A. A. Marmalyuk
Publikováno v:
Optoelectronics, Instrumentation and Data Processing. 43:382-387
An infrared 320 × 256 focal plane array (FPA) for 7.5–10 μm was designed, fabricated and investigated. The photodetector matrix based on GaAs/AlGaAs quantum-well multilayer structures was grown by hydride epitaxy from organometallic compounds. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03ed6c0d90f3a2741615390e18c8f9ca
https://doi.org/10.3103/s8756699007040139
https://doi.org/10.3103/s8756699007040139
Publikováno v:
Semiconductors. 35:1110-1116
A technology has been elaborated and photodetector modules based on Hg1−x CdxTe/GaAs heterostructures and GaAs/AlGaAs multiquantum-well structures grown by molecular-beam epitaxy were fabricated for the 3–5 and 8–12 µm spectral ranges. The pho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22ea16856c1f850a2fae9a08c2e9cf14
https://doi.org/10.1134/1.1403577
https://doi.org/10.1134/1.1403577
Publikováno v:
Semiconductors. 34:634-640
Multiphonon field-assisted thermal capture of thermally equilibrium charge carriers by deep-level centers located in a depletion region of a semiconductor is analyzed. It is shown that, in the case of strong electron-phonon coupling (SEPC), the multi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c15d2cb77629c9f0ed995a26d0abdd9
https://doi.org/10.1134/1.1188044
https://doi.org/10.1134/1.1188044
Publikováno v:
Semiconductors. 32:1082-1086
The electron capture parameters and photoionization cross section of the unintentional deep levels, which are responsible for photoelectrical memory in GaAs/AlGaAs multilayer quantum-well structures, have been found from an analysis of the kinetics o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78f069040db4c8bc08d6a9d2add26338
https://doi.org/10.1134/1.1187573
https://doi.org/10.1134/1.1187573
Publikováno v:
Semiconductors. 32:189-194
An increase in the dark current (by 2–3 orders of magnitude) in GaAs/AlxGa1−x As multilayer quantum-well structures with x⋍0.4 is observed after illumination of the structures with optical light (λ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::926a5f274825447e1cff49b3fb87a3b9
https://doi.org/10.1134/1.1187342
https://doi.org/10.1134/1.1187342