Zobrazeno 1 - 8
of 8
pro vyhledávání: '"V V Popovichev"'
Autor:
A P Nekrasov, I V Akimova, D R Miftakhutdinov, T I Gushchik, V V Popovichev, Alexandr P Bogatov, A E Drakin, N V D'yachkov
Publikováno v:
Quantum Electronics. 38:993-1000
Quantum-well ridge GaAs/AlGaAs heterostructure lasers are studied at high pump currents. It is shown that their catastrophic optical damage (COD) is preceded, as a rule, by a giant kink caused by the collapse of a waveguide in a horizontal plane. It
Publikováno v:
Quantum Electronics. 38:935-939
The waveguide design of a laser heterostructure is optimised to expand the laser beam in the vertical direction at the output mirror of a laser diode (up to 1.5 μm at the half intensity for the zero mode). Experimental samples of such diodes operate
Autor:
Mikhail B Uspenskii, A. V. Simakov, Evgeniya I Davydova, V V Popovichev, A. A. Sratonnikov, S. A. Plisyuk, Aleksandr A Marmalyuk, A E Drakin, A. A. Chel'nyi, Alexandr P Bogatov
Publikováno v:
Quantum Electronics. 32:1099-1104
More than 200 mW of a single-transverse-mode cw output power is produced from a semiconductor heterolaser by optimising the waveguide properties of its ridge structure. The laser-beam divergence is close to the diffraction limit and its brightness ex
Autor:
S. E. Khlopotin, A E Drakin, P G Eliseev, V. V. Popovichev, M B Uspenskiĭ, Viktor A Shishkin, G T Pak, Evgeniya I Davydova
Publikováno v:
Soviet Journal of Quantum Electronics. 22:954-960
An optical model is constructed for a GaAlAs/GaAs stripe-geometry laser heterostructure with a ridge-waveguide configuration in the p-type emitter layer. This waveguide configuration provides lateral optical confinement. The directional characteristi
Autor:
Aleksei A Stratonnikov, V V Popovichev, S A Plisyuk, Alexandr P Bogatov, A E Drakin, Anna V Borodaenko, I V Akimova
Publikováno v:
Quantum Electronics, 35(6), 515-519
The parameters of a 0.81-mu m ridge heterolaser are optimised by using the procedure developed earlier. As a result, 200 mW of the single-mode output is obtained in a diffraction-limited beam. It is shown experimentally that the near-field two-dimens
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::75137398df323c068275f745298dcd8a
https://research.rug.nl/en/publications/28ff6814-d965-499a-ba94-09de4757a0c8
https://research.rug.nl/en/publications/28ff6814-d965-499a-ba94-09de4757a0c8
Publikováno v:
Soviet Journal of Quantum Electronics. 17:566-568
Tests were made on laboratory samples of cw GaAIAs/GaAs lasers. The service life was determined at room and elevated temperatures. Conversion to room temperature yielded the lognormal distribution of failure with an average operational lifetime of 3.
Publikováno v:
Soviet Journal of Quantum Electronics. 18:1261-1263
An investigation was made of high-frequency characteristics of GaAlAs injection lasers under continuous modulation conditions. The optical amplitude–frequency characteristics and the frequency dependence of the impedance made it possible to determi
Publikováno v:
Soviet Journal of Quantum Electronics. 10:1464-1465
Continuous-wave losing was achieved at temperatures up to 70°C in mesastripe AlGaAs heterojunction lasers consisting of stripes 10-μ wide (emission wavelength 835-845 nm) attached on the substrate side to a copper heat sink. This made it possible t