Zobrazeno 1 - 4
of 4
pro vyhledávání: '"V V Lendyashova"'
Autor:
V. O. Gridchin, R. R. Reznik, K. P. Kotlyar, V. V. Lendyashova, A. S. Dragunova, D. A. Kirilenko, N.V. Kryzhanovskaya, G. E. Cirlin
Publikováno v:
2022 International Conference Laser Optics (ICLO).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a498e4a9c9966c0b45fcc45577e954a9
https://doi.org/10.1109/iclo54117.2022.9839836
https://doi.org/10.1109/iclo54117.2022.9839836
Autor:
V V Lendyashova, K P Kotlyar, V O Gridchin, R R Reznik, A I Lihachev, K Yu Shubina, T N Berezovskaya, E V Nikitina, I P Soshnikov, G E Cirlin
Publikováno v:
Journal of Physics: Conference Series. 2086:012191
In modern optoelectronics, arrays or single nanowires (NWs) of III-N materials, in particular InGaN, separated from the original substrates are used to fabricate light-emitting diodes or single photon sources. This work describes a technology of sepa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba5c645313a891de98bc7f115127ade6
https://doi.org/10.1088/1742-6596/2086/1/012191
https://doi.org/10.1088/1742-6596/2086/1/012191
Autor:
V V Lendyashova, K P Kotlyar, V O Gridchin, R R Reznik, A I Lihachev, I P Soshnikov, G E Cirlin
Publikováno v:
Journal of Physics: Conference Series. 2103:012098
The possibility of the controlled removal of GaN nanowires (NWs) from an SiOx inhibitor layer of patterned SiOx/Si substrates has been demonstrated. It has been found that the wet KOH etching preserves the selectively grown GaN NWs on Si surface, whe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bc49127898efc8fffdce747e3a172bf
https://doi.org/10.1088/1742-6596/2103/1/012098
https://doi.org/10.1088/1742-6596/2103/1/012098
Autor:
E. V. Nikitina, I. P. Soshnikov, T. N. Berezovskaya, V. V. Lendyashova, K. P. Kotlyar, R. R. Reznik, G. E. Cirlin
Publikováno v:
Journal of Physics: Conference Series. 1695:012047
In this work, it is experimentally shown that the etching of GaN or InGaN NWs in the KOH solution allows managing the morphology and optical properties of the nanowires array. Thinning rate of GaN nanowires is 5 times slower than the rate for InGaN n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b21eeac67139d664aaa738c9700f1997
https://doi.org/10.1088/1742-6596/1695/1/012047
https://doi.org/10.1088/1742-6596/1695/1/012047