Výsledky vyhledávání - "V V Frantsuzova"

Rationale of the need to the development of semiconductor industry in Russia with the 28 nanometer semiconductor device fabrication node and below

Autor: Ya I. Petrenko, V. V. Frantsuzova, A. R. Avanesyan, A. V. Fomina, D. V. Kornachev

Publikováno v: IOP Conference Series: Materials Science and Engineering. 498:012043

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4e438ea005af3887b641950c8319d3e2
https://doi.org/10.1088/1757-899x/498/1/012043

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Akademický článek

Rationale of the need to the development of semiconductor industry in Russia with the 28 nanometer semiconductor device fabrication node and below.

Autor: A V Fomina, V V Frantsuzova, Ya I Petrenko, D V Kornachev, A R Avanesyan

Publikováno v: IOP Conference Series: Materials Science & Engineering; Apr2019, Vol. 498 Issue 1, p1-1, 1p

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