Zobrazeno 1 - 10
of 26
pro vyhledávání: '"V V Emtsev"'
Publikováno v:
Vestnik Tambovskogo gosudarstvennogo tehnicheskogo universiteta. 27:299-307
It is proposed to use Li4Si alloys with Li content > 50 wt.% as anode materials. A technology for the synthesis of Li4Si in a pre-formed anode with thermal interaction Li with Si-containing composite material has been developed. It is proposed to use
Autor:
Jsc Energia, Yelets, Lipetsk region, Russia, Yu. A. Stekolnikov, S. V. Grishin, Yu. A. Gagarin', Voronezh, Russia, D. I. Maksimov, V. V. Emtsev, Yu. E. Mamontova, Military Educational
Publikováno v:
Vestnik Tambovskogo gosudarstvennogo tehnicheskogo universiteta. 27:149-156
The current-voltage characteristics of thermal batteries with anodes based on lithium and its alloys, with cathodes made of iron or cobalt disulfides are presented. The electrolyte-melt is a thickened mixture of fluorides, lithium and potassium chlor
Autor:
V. V. Emtsev, G. A. Oganesyan
Publikováno v:
Semiconductors. 54:1388-1394
Electrical measurements on heavily doped n-type germanium subjected to gamma-irradiation show that the features of impurity-related defect formation before n–p conversion of conductivity type are the same as those previously observed in lightly and
Publikováno v:
Semiconductors. 54:46-54
Annealing processes of vacancy-impurity atom pairs in moderately doped n-type silicon grown by the floating-zone technique and subjected to 0.9 MeV electron irradiation are investigated by means of Hall effect and conductivity measurements taking ove
Publikováno v:
Semiconductors. 52:1677-1685
A comparative study of interactions of shallow impurities with primary defects in oxygen- and carbon-lean moderately doped Si and Ge subjected to irradiation with 0.9 MeV electrons, 60Co gamma-rays, and 15 MeV protons at room temperature is presented
Autor:
D. S. Poloskin, Anton E. Chernyakov, E. V. Gushchina, V. V. Emtsev, E. I. Shabunina, Vitali V. Kozlovski, A. P. Kartashova, A. G. Oganesyan, A. A. Zybin, Alexander Usikov, V. V. Lundin, A. V. Saharov, V. N. Petrov, N. A. Tal'nishnih, N. M. Shmidt, M. F. Kudoyarov
Publikováno v:
Semiconductors. 52:942-949
A fractal-percolation system that includes extended defects and random fluctuations in the alloy composition is formed during the growth of device structures based on Group-III nitrides. It is established that the specific features of this system are
Autor:
V. V. Ratnikov, A. N. Titkov, A G Kolmakov, M S Dunaevsky, E.E. Zavarin, N M Shmidt, V V Emtsev, A S Kryzhanovsky, A S Usikov, D S Poloskin, W V Lundin
Publikováno v:
Microscopy of Semiconducting Materials 2001 ISBN: 9781351074629
Microscopy of Semiconducting Materials 2001
Microscopy of Semiconducting Materials 2001
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fe6aea37963a2445ece8d51ddf0b3fe
https://doi.org/10.1201/9781351074629-72
https://doi.org/10.1201/9781351074629-72
Publikováno v:
Polythematic Online Scientific Journal of Kuban State Agrarian University.
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 327:032008
Autor:
V. V. Emtsev, C. A. J. Ammerlaan, G. A. Oganesyan, B. A. Andreev, D. I. Kuritsyn, A. Misiuk, B. Surma, C. A. Londos
Publikováno v:
Scopus-Elsevier
The formation kinetics of Thermal Double Donors, a dominant family of thermal donors in Czochralski-grown silicon annealed at T < 600 °C, is studied in detail. A striking enhancement effect of hydrostatic pressures of about 1 GPa on their formation