Výsledky vyhledávání - "V V Andryushkin"

Optical absorption in a waveguide based on an n-type AlGaAs heterostructure

Autor: Yu. K. Bobretsova, V. V. Andryushkin, Nikita A. Pikhtin, V. V. Shamakhov, A. A. Klimov, D. A. Veselov, K.V. Bakhvalov, Sergey O. Slipchenko

Publikováno v: Quantum Electronics. 51:987-991

Free carrier absorption of optical radiation in layers of an AlGaAs/GaAs heterostructure is studied by the method of probe radiation coupling in order to determine the absorption cross section parameter in the AlGaAs material with a high (22%) alumin

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::35166be13817ad476021340371dd1d2b
https://doi.org/10.1070/qel17640

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Optical Properties of Three-Dimensional InGaP(As) Islands Formed by Substitution of Fifth-Group Elements

Autor: A. V. Babichev, N. V. Kryzhanovskaya, D. V. Denisov, A. G. Gladyshev, E. S. Kolodeznyi, Alexey M. Nadtochiy, A. Yu. Egorov, Innokenty I. Novikov, Anna S. Dragunova, L. Ya. Karachinsky, A. V. Uvarov, S. D. Komarov, V. V. Andryushkin

Publikováno v: Optics and Spectroscopy. 129:256-260

The optical properties of three-dimensional quantum-size InGaPAs islands, which are formed by substitution of phosphorous by arsenic in an InGaPAs layer deposited on GaAs directly during the epitaxial growth, are studied by photoluminescence (PL) spe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c457ee67df56bdcce7d7b8a967fff8f4
https://doi.org/10.1134/s0030400x21020089

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Studying the Optical and Structural Properties of Three-Dimensional InGaP(As) Islands Formed by Substitution of Elements of the Fifth Group

Autor: Innokenty I. Novikov, V. N. Nevedomskii, E. S. Kolodeznyi, V. V. Andryushkin, A. V. Babichev, A. G. Gladyshev, L. Ya. Karachinsky, D. V. Denisov, A. Yu. Egorov

Publikováno v: Technical Physics. 65:2047-2050

A new method for the formation of three-dimensional quantum-dimensional InGaP(As) islands is proposed, which consists in replacing phosphorus with arsenic in an InGaP layer deposited on GaAs directly during epitaxial growth. It is shown that the repl

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::080dbb5b06153b8a585ca711a7a09eba
https://doi.org/10.1134/s1063784220120099

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The Influence of the Parameters of a Short-Period InGaAs/InGaAlAs Superlattice on Photoluminescence Efficiency

Autor: L. Ya. Karachinsky, A. Yu. Egorov, V. N. Nevedomskii, A. V. Babichev, D. V. Denisov, Innokenty I. Novikov, E. S. Kolodeznyi, A. G. Gladyshev, Vladislav E. Bougrov, S. S. Rochas, V. V. Andryushkin

Publikováno v: Technical Physics Letters. 46:1128-1131

We have studied heterostructures based on short-period InGaAs/InGaAlAs superlattices (SLs) manufactured by molecular-beam epitaxy on InP substrates, intended for use as active regions in vertical-cavity surface-emitting lasers operating in a 1.3-μm

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2555f5f87bd7335314e5aec26860d30e
https://doi.org/10.1134/s1063785020110267

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Formation of Highly Conducting Optically Transparent Films with Multigraphene Structure via Carbonization of Polyimide Langmuir–Blodgett Films

Autor: S. I. Goloudina, Alexander N. Smirnov, G. A. Konoplev, V. M. Pasyuta, V. V. Kudryavtsev, V. V. Andryushkin, Iosif V. Gofman, Demid A. Kirilenko, V. P. Sklizkova, V. M. Svetlichnyi, E. N. Sevost’yanov, V. V. Luchinin

Publikováno v: Technical Physics Letters. 45:471-474

Multigraphene films have been for the first time obtained on the surface of quartz glass via carbonization of polyimide Langmuir–Blodgett films. The Raman spectra of the films show bands G and D and a broad band at 2300–3200 cm–1, which are cha

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0a3806985fe63f2e708b94639ffd1080
https://doi.org/10.1134/s1063785019050067

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Zn diffusion technology for InP-InGaAs avalanche photodiodes

Autor: V V Andryushkin, A G Gladyshev, A V Babichev, E S Kolodeznyi, I I Novikov, L Ya Karachinsky, N A Maleev, V P Khvostikov, B Ya Ber, A G Kuzmenkov, S S Kizhaev, V E Bougrov

Publikováno v: Journal of Physics: Conference Series. 2103:012184

This paper presents a study of Zn diffusion process into InP and InGaAs/InP epitaxial heterostructures grown by molecular beam epitaxy. It was found that both diffusion systems: a resistively heated quartz reactor with a solid-state Zn vapor source p

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::23f7a93620b60232100be58ccabbbd71
https://doi.org/10.1088/1742-6596/2103/1/012184

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Investigation of optical and structural properties of three-dimensional InGaPAs islands formed by substitution of elements of the fifth group

Autor: I. I. Novikov, V. N. Nevedomskii, A. G. Gladyshev, E. S. Kolodeznyi, A. Yu. Egorov, V. V. Andryushkin, L. Ya. Karachinsky, A. V. Babichev

Publikováno v: Journal of Physics: Conference Series. 1697:012106

We propose a new method to obtain the three-dimensional quantum-sized object arrays with reduced surface density. These arrays are formed by elastic transformation of the InGaPAs layer grown on the GaAs surface. We present the results on influence of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2a0adb9b0701b200a41db6251aaca59f
https://doi.org/10.1088/1742-6596/1697/1/012106

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