Zobrazeno 1 - 10
of 17
pro vyhledávání: '"V V, Romaka"'
Publikováno v:
Фізика і хімія твердого тіла, Vol 21, Iss 2, Pp 272-278 (2020)
Interaction between the components in the Ho-Fe-Sn ternary system was studied using X-ray diffractometry, metallography and electron microprobe analysis. Isothermal section of the phase diagram was constructed at 670 K over the whole concentration ra
Externí odkaz:
https://doaj.org/article/bdaba063f46e4a3e809f14b2cc664ad5
Publikováno v:
Фізика і хімія твердого тіла, Vol 19, Iss 1, Pp 60-65 (2018)
The interaction of the components in the Gd-Mn-Sn ternary system was studied using the methods of X-ray and microstructure analyses, in the whole concentration range. The phase diagrams of the Gd-Mn-Sn system were constructed at 873 and 673 K. At bot
Externí odkaz:
https://doaj.org/article/b7ee23e321574c6f8e4778bfea449e5c
Publikováno v:
Фізика і хімія твердого тіла, Vol 18, Iss 2, Pp 187-193 (2018)
The mechanism of simultaneous generation of donor-acceptor pairs in ZrNiSn1-xGax semiconductor solid solution is established. The modeled distribution of atoms in the crystal lattice of ZrNiSn1-xGax showed that the speed of movement of Fermi level ε
Externí odkaz:
https://doaj.org/article/810b0f9bc94e474cb39b8eebab010d14
Publikováno v:
Фізика і хімія твердого тіла, Vol 17, Iss 2, Pp 212-221 (2017)
The features of structural, energy state and electrokinetic characteristics were investigated for Hf1 xTmxNiSn solid solution in the range: T = 80 - 400 K, x = 0 - 0.40. It was confirmed partly disorder crystal structure of HfNiSn compound as a resul
Externí odkaz:
https://doaj.org/article/4fd140b84ae24bedbc6c26000963881a
Publikováno v:
Фізика і хімія твердого тіла, Vol 17, Iss 1, Pp 37-42 (2017)
The features of structural, energy state and kinetic characteristics of the p-GdNiSb and p-LuNiSb semiconductors were investigated in the temperature range T = 4.2-400 K. As example, in p-LuNiSb, the generating of structural acceptor defects as a res
Externí odkaz:
https://doaj.org/article/2ba7e5ce7df94944853e11c78ee10f63
Publikováno v:
Фізика і хімія твердого тіла, Vol 17, Iss 4, Pp 552-558 (2017)
The features of structural, energy state and electrokinetic characteristics were investigated for Hf1-xErxNiSn solid solution in the range: T = 80 – 400 K, x = 0 - 0.10. It was confirmed partly disorder crystal structure of HfNiSn compound as a res
Externí odkaz:
https://doaj.org/article/4854a4a134054e7fa7085fa98f798896
Autor:
T. O. Prikhna, M. K. Monastyrov, B. Büchner, V. V. Klimov, M. V. Karpets, V. E. Moshchil, A. V. Shaternik, V. V. Romaka, G. A. Bagliuk, G. M. Kochetov, O. V. Prysiazhna
Publikováno v:
Powder Metallurgy and Metal Ceramics. 61:155-161
Autor:
T. A. Prikhna, A. L. Kasatkin, M. Eisterer, V. E. Moshchil, A. P. Shapovalov, V. V. Romaka, J. Rabier, A. Jouline, X. Chaud, M. Rindfleisch, M. Tomsic, S. S. Ponomaryov, A. V. Shaternik, V. B. Sverdun
Publikováno v:
IEEE Transactions on Applied Superconductivity. 32:1-6
Autor:
V. V. Romaka, P. Rogl, L. P. Romaka, Yu. V. Stadnyk, R. O. Korzh, V. Ya. Krayovskyy, T. M. Kovbasuk, H. V. Tsygylyk
Publikováno v:
Фізика і хімія твердого тіла, Vol 16, Iss 2, Pp 335-340 (2016)
The peculiarities of the crystal and electronic structure of V1-xTixFeSb, х = 0 – 0,20, semiconductor solid solution were investigated. The mechanism of generation of structural defects of acceptor and donor nature is described. In particular the
Externí odkaz:
https://doaj.org/article/a0874e6cbda9443a991108e13d66bd84
Autor:
V V, Romaka, G, Rogl, V, Buršíková, J, Buršík, H, Michor, A, Grytsiv, E, Bauer, G, Giester, P, Rogl
Publikováno v:
Dalton transactions (Cambridge, England : 2003). 51(1)
Physical properties